Determination of the planarization distance for copper CMP process

被引：0

作者：

Hymes, S ^{[1
]}

Smekalin, K ^{[1
]}

Brown, T ^{[1
]}

Yeung, H ^{[1
]}

Joffe, M ^{[1
]}

Banet, M ^{[1
]}

Park, T ^{[1
]}

Tugbawa, T ^{[1
]}

Boning, D ^{[1
]}

Nguyen, J ^{[1
]}

West, T ^{[1
]}

Sands, W ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

CHEMICAL-MECHANICAL POLISHING - FUNDAMENTALS AND CHALLENGES | 2000年 / 566卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A planarization monitor has been applied to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quantify the planarization performance in terms of the defined step-height-reduction-ratio (SHRR). Illustrative results as a function of slurry, pad type and process conditions are presented. For a typical stiff-pad copper CMP process, we determined the planarization distance to be approximately 2mm.

引用

收藏

页码：211 / 216

页数：6

相关论文

共 50 条

[41] A study on exploring the alkaline copper CMP slurry without inhibitors to achieve high planarization efficiency [J].

Luan, Xiaodong ;

Liu, Yuling ;

Wang, Chenwei ;

Niu, Xinhuan ;

Wang, Juan ;

Zhang, Wenqian .

MICROELECTRONIC ENGINEERING, 2016, 160 :5-11

[42] Study of planarization efficiency of an alkaline copper slurry on 300mm pattern wafer CMP [J].

Zheng, Wei-Yan ;

Liu, Yu-Ling ;

Wang, Chen-Wei ;

Chuan, Li-Wei ;

Wei, Wen-Hao ;

Yue, Hong-Wei ;

Cao, Guan-Long .

Gongneng Cailiao/Journal of Functional Materials, 2012, 43 (24) :3472-3474

[43] Chemical Mechanical Planarization (CMP) for Microelectronic Applications [J].

Li Yuzhuo Center for Advanced Material Processing Clarkson University Potsdam NY USA .

合成化学, 2004, (S1) :115-115

[44] Functional ceramic substrate planarization by CMP technology [J].

Lin, X ;

Yuan, JL ;

Lü, BH ;

Zhang, LB ;

Ji, SM .

PROCEEDINGS OF THE SECOND INTERNATIONAL SYMPOSIUM ON INSTRUMENTATION SCIENCE AND TECHNOLOGY, VOL 2, 2002, :188-193

[45] Study on planarization of silicon-wafer by CMP [J].

Sasaki, Yoshiaki ;

Aoyama, Hideki ;

Inasaki, Ichiro ;

Shibaya, Hiroshi .

Nippon Kikai Gakkai Ronbunshu, C Hen/Transactions of the Japan Society of Mechanical Engineers, Part C, 2002, 68 (10) :3108-3114

[46] The overview and future prospects for planarization CMP technology [J].

Kurokawa, Syuhei .

Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering, 2018, 84 (03) :213-216

[47] CMP characteristics and polishing machine in ILD planarization [J].

Watanabe, J ;

Inamura, T ;

Beppu, T ;

Minamikawa, Y .

ADVANCES IN ABRASIVE TECHNOLOGY, 1997, :66-70

[48] DISHING STUDY ON CHEMICAL MECHANICAL PLANARIZATION (CMP) [J].

Du, Huize ;

Liu, Shubin ;

Yang, Yu ;

Li, Hu ;

Bao, Yu ;

Fang, Jingxun ;

Zhang, Yu .

CONFERENCE OF SCIENCE & TECHNOLOGY FOR INTEGRATED CIRCUITS, 2024 CSTIC, 2024,

[49] Multi-sensor monitoring system in chemical mechanical planarization (CMP) for correlations with process issues [J].

Jeong, H. ;

Kim, H. ;

Lee, S. ;

Dornfeld, D. .

CIRP ANNALS-MANUFACTURING TECHNOLOGY, 2006, 55 (01) :325-328

[50] Development of modeling to investigate polyurethane pad hardness in chemical mechanical planarization/polishing (CMP) process [J].

Le Nam Quoc Huy ;

Lin, Chun-Yu ;

Chen, Chao-Chang A. .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SJ)

← 1 2 3 4 5 →