Self-compensation in manganese-doped ferromagnetic semiconductors

被引：156

作者：

Erwin, SC ^{[1
]}

Petukhov, AG

机构：

[1] USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA

[2] S Dakota Sch Mines & Technol, Dept Phys, Rapid City, SD USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.89.227201

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the nonequilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band model, partial compensation promotes ferromagnetic order below the metal-insulator transition, with the highest Curie temperature occurring for 0.5 holes per substitutional Mn.

引用

页码：227201 / 227201

页数：4

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