Long wavelength MOCVD grown InGaAsN-GaAsN quantum well lasers emitting at 1.378-1.41 μm

被引：15
作者：
Yeh, JY
Tansu, N
Mawst, LJ
机构：
[1] Univ Wisconsin, Dept Elect & Comp Engn, Reed Ctr Photon, Madison, WI 53706 USA
[2] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA
来源：
ELECTRONICS LETTERS | 2004年 / 40卷 / 12期
关键词：
D O I：
10.1049/el:20040474
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low threshold InGaAsN QW lasers with lasing wavelength at 1.378 and 1.41 mum were demonstrated by metal organic chemical vapour deposition (MOCVD). The threshold current densities are 563 and 1930 A/cm(2) for the 1.378 and 1.41 pin emitting lasers, respectively. The significant improvement of device performance is believed due to utilisation of high temperature annealing and introduction of GaAsN barriers to suppress the resulting wavelength blue shift. A comparable characteristic temperature coefficient of the external differential quantum efficiency, T-1, is observed for the InGaAsN-GaAsN QW laser compared to similar InGaAsN/GaAs structures.
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收藏
页码：739 / 741
页数：3
相关论文
共 9 条
[1]   Low-threshold CW GaInNAsSb/GaAs laser at 1.49 μm [J].
Bank, SR ;
Wistey, MA ;
Yuen, HB ;
Goddard, LL ;
Ha, W ;
Harris, JS .
ELECTRONICS LETTERS, 2003, 39 (20) :1445-1446
[2]   GaInNAsSb for 1.3-1.6-μm-long wavelength lasers grown by molecular beam epitaxy [J].
Gambin, V ;
Ha, W ;
Wistey, M ;
Yuen, H ;
Bank, SR ;
Kim, SM ;
Harris, JS .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :795-800
[3]   Towards high performance GaInAsN/GaAsN laser diodes in 1.5 μm range [J].
Gollub, D ;
Fischer, M ;
Forchel, A .
ELECTRONICS LETTERS, 2002, 38 (20) :1183-1184
[4]   Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.38 μm [J].
Höhnsdorf, F ;
Koch, J ;
Leu, S ;
Stolz, W ;
Borchert, B ;
Druminski, M .
ELECTRONICS LETTERS, 1999, 35 (07) :571-572
[5]   Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy [J].
Li, W ;
Jouhti, T ;
Peng, CS ;
Konttinen, J ;
Laukkanen, P ;
Pavelescu, EM ;
Dumitrescu, M ;
Pessa, M .
APPLIED PHYSICS LETTERS, 2001, 79 (21) :3386-3388
[6]   High-performance CW 1.26-μm GaInNAsSb-SQW ridge lasers [J].
Shimizu, H ;
Kumada, K ;
Uchiyama, S ;
Kasukawa, A .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (02) :355-364
[7]   Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers [J].
Tansu, N ;
Yeh, JY ;
Mawst, LJ .
APPLIED PHYSICS LETTERS, 2003, 83 (13) :2512-2514
[8]  
TANSU N, 2004, P MRS SPR M 2004 S L
[9]   High T0 long-wavelength InGaAsN quantum-well lasers grown by GSMBE using a solid arsenic source [J].
Wei, JA ;
Xia, FN ;
Li, CQ ;
Forrest, SR .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2002, 14 (05) :597-599
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