Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate

被引：13

作者：

Chen, Ningli ^{[1
]}

Lin, Guangyang ^{[1
]}

Zhang, Lu ^{[1
]}

Li, Cheng ^{[1
]}

Chen, Songyan ^{[1
]}

Huang, Wei ^{[1
]}

Xu, Jianfang ^{[1
]}

Wang, Jianyuan ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Semicond Photon Res Ctr, OSED, Xiamen 361005, Fujian, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 05期

基金：

中国国家自然科学基金;

关键词：

BAND-GAP; SILICON; DEPOSITION; ALLOYS;

D O I：

10.7567/JJAP.56.050301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A simple method to form GeSn nanocrystallite thin films with high Sn composition at low temperature by sputtering Ge on self-assembled Sn nanodots is proposed. During the sputtering process, Ge atoms diffuse into Sn nanodots and then nanocrystalline GeSn freezes out as temperature is above 150 degrees C. GeSn nanocrystallite thin films with high Sn composition of 27.3% are achieved at 150 degrees C and Sn composition decreases gradually with elevation of temperature. The hole mobility of the GeSn nanocrystallite thin film of 14.0 cm(2).V-1.s(-1) is achieved with the process temperature of less than 275 degrees C, which is suitable for flexible electronics. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

共 21 条

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