Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx

被引：32

作者：

Oton, C. J. ^{[1
]}

Loh, W. H.

Kenyon, A. J.

机构：

[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England

[2] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2227637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Despite the observation by a number of groups of a strong luminescence sensitization effect of erbium ions by excitation exchange from silicon nanoclusters, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low for much of the material reported. In this work, we examine the evidence and point out that Er excited state absorption is the likely cause. (c) 2006 American Institute of Physics.

引用

页数：3

共 13 条

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