Oxidation of the porous silicon surface under the action of a pulsed ionic beam: XPS and XANES studies

被引：1

作者：

Bolotov, V. V. ^{[1
]}

Ivlev, K. E. ^{[1
]}

Korusenko, P. M. ^{[1
]}

Nesov, S. N. ^{[1
]}

Povoroznyuk, S. N. ^{[1
]}

机构：

[1] Russian Acad Sci, Omsk Sci Ctr, Siberian Branch, Omsk 644024, Russia

来源：

PHYSICS OF THE SOLID STATE | 2014年 / 56卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

SI/SNOX NANOCOMPOSITE; ELECTRON;

D O I：

10.1134/S1063783414060079

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The changes in the electronic structure and phase composition of porous silicon under action of pulsed ionic beams have been studied by X-ray photoelectron spectroscopy (XPS) and X-ray absorption near-edge spectroscopy (XANES) using synchrotron radiation. The Si 2p and O 1s core photoemission spectra for different photoelectron collection angles, valence band photoemission spectra, and X-ray absorption near-edge fine structure spectrain the region of Si L (2,3) edges of the initial and irradiated samples have been analyzed. It has been found that, as a result of the irradiation, a thin oxide film consisting predominantly of higher oxide SiO2 is formed on the porous silicon surface, which increases the energy gap of the silicon oxide. Such film exhibits passivation properties preventing the degradation of the composition and properties of porous silicon in contact with the environment.

引用

页码：1256 / 1260

页数：5

共 15 条

[1] MODIFICATIONS IN THE SI VALENCE-BAND AFTER ION-BEAM-INDUCED OXIDATION [J].

ALAY, JL ;

VANDERVORST, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :2420-2424

[2] On the apparently anomalous response of porous silicon to nitrogen dioxide [J].

Amato, G ;

Boarino, L ;

Bellotti, F .

APPLIED PHYSICS LETTERS, 2004, 85 (19) :4409-4411

[3]

Basu S, 2011, CRYSTALLINE SILICON - PROPERTIES AND USES, P219

[4] Formation of two-layer composite-on-insulator structures based on porous silicon and SnO x . Study of their electrical and gas-sensing properties [J].

Bolotov, V. V. ;

Roslikov, V. E. ;

Roslikova, E. A. ;

Ivlev, K. E. ;

Knyazev, E. V. ;

Davletkildeev, N. A. .

SEMICONDUCTORS, 2014, 48 (03) :397-401

[5] Formation of por-Si/SnOx nanocomposite by high-power ion beams of nanosecond duration [J].

Bolotov, V. V. ;

Kovivchak, V. S. ;

Korepanov, A. A. ;

Knyazev, E. V. ;

Nesov, S. N. ;

Roslikov, V. E. ;

Sten'kin, Yu. A. ;

Korusenko, P. M. ;

Shelagin, R. V. .

JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2011, 5 (06) :1185-1188

[6] Fabrication of por-Si/SnOx Nanocomposite Layers for Gas Microsensors and Nanosensors [J].

Bolotov, V. V. ;

Korusenko, P. M. ;

Nesov, S. N. ;

Povoroznyuk, S. N. ;

Roslikov, V. E. ;

Kurdyukova, E. A. ;

Sten'kin, Yu. A. ;

Shelyagin, R. V. ;

Knyazev, E. V. ;

Kan, V. E. ;

Ponomareva, I. V. .

SEMICONDUCTORS, 2011, 45 (05) :693-698

[7] Synchrotron investigations of the specific features in the electron energy spectrum of silicon nanostructures [J].

Domashevskaya, ÉP ;

Terekhov, VA ;

Kashkarov, VM ;

Manukovskii, ÉY ;

Turishchev, SY ;

Molodtsov, SL ;

Vyalykh, DV ;

Khokhlov, AF ;

Mashin, AI ;

Shengurov, VG ;

Svetlov, SP ;

Chalkov, VY .

PHYSICS OF THE SOLID STATE, 2004, 46 (02) :345-350

[8] Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy [J].

Kasrai, M ;

Lennard, WN ;

Brunner, RW ;

Bancroft, GM ;

Bardwell, JA ;

Tan, KH .

APPLIED SURFACE SCIENCE, 1996, 99 (04) :303-312

[9]

Korepanov A. A., 2012, 4 ALL RUSS C PHYS PH, P112

[10] Influence of Natural Aging on Photoluminescence from Porous Silicon [J].

Len'shin, A. S. ;

Kashkarov, V. M. ;

Turishchev, S. Yu ;

Smirnov, M. S. ;

Domashevskaya, E. P. .

TECHNICAL PHYSICS, 2012, 57 (02) :305-307

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