Electrical and magnetic transport properties of Co-doped Bi2Se3 topological insulator crystals

被引：12

作者：

Zhang, Min ^{[1
]}

Lv, Li ^{[1
]}

Wei, Zhantao ^{[1
]}

Yang, Liqin ^{[1
]}

Yang, Xinsheng ^{[1
]}

Zhao, Yong ^{[1
]}

机构：

[1] Southwest Jiaotong Univ, Key Lab Adv Technol Mat, Minist Educ, Superconductor & New Energy R&D Ctr, Chengdu 610031, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2014年 / 28卷 / 17期

基金：

中国国家自然科学基金;

关键词：

Topological insulator; electrical transport; magnetoresistance; Bi2Se3; SINGLE-CRYSTALS; THIN-FILM; SURFACE; BI2TE3;

D O I：

10.1142/S0217979214501082

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transition metal doped topological insulators (TI) Co-x Bi2-xSe3 were prepared and the phase structure, electrical and magnetic transport properties, Hall mobility and Hall resistivity were studied. The lattice constant c decreased with the increasing Co concentration. All samples exhibited weak metallic resistivity. With increasing Co concentration, the value of rho(xx) increased, reaching a maximum at x = 0.02, and then decreased. The resistivity data could be fitted by different formulas below and above 30 K in all samples result from different mechanism corresponding to different temperature regions. The magnetoresistance (MR) of Bi2Se3 TI showed a change dependence of concentration. The MR was enhanced by small quantity of Co doping, attaining a maximum value in Bi1.98Co0.02Se3 crystal; but MR was suppressed in high-doped sample (x > 0.02). Those results were ascribed to the rivalry between the phonon scattering effect and the magnetic ordering in single crystals caused by Co ions. For low-doped samples doped, the contribution of phonon scattering was much higher than that of magnetic ordering, leading to larger MR value. However, in samples doped with higher Co concentrations, the magnetic ordering effect became dominant and caused the MR decreases. The MR increased with decreasing temperature and increasing magnetic field. The Hall mobility data indicated that incorporating Co in Bi2Se3 single crystal can reduce native defect of Bi2Se3.

引用

页数：9

共 30 条

[1] Electrically Detected Interferometry of Majorana Fermions in a Topological Insulator [J].

Akhmerov, A. R. ;

Nilsson, Johan ;

Beenakker, C. W. J. .

PHYSICAL REVIEW LETTERS, 2009, 102 (21)

[2] PROPERTIES OF THIN-FILM THERMOELECTRIC-MATERIALS - APPLICATION TO SENSORS USING THE SEEBECK EFFECT [J].

BOYER, A ;

CISSE, E .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 13 (02) :103-111

[3] Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition [J].

Brom, Joseph E. ;

Ke, Yue ;

Du, Renzhong ;

Won, Dongjin ;

Weng, Xiaojun ;

Andre, Kalissa ;

Gagnon, Jarod C. ;

Mohney, Suzanne E. ;

Li, Qi ;

Chen, Ke ;

Xi, X. X. ;

Redwing, Joan M. .

APPLIED PHYSICS LETTERS, 2012, 100 (16)

[4] Strong surface scattering in ultrahigh-mobility Bi2Se3 topological insulator crystals [J].

Butch, N. P. ;

Kirshenbaum, K. ;

Syers, P. ;

Sushkov, A. B. ;

Jenkins, G. S. ;

Drew, H. D. ;

Paglione, J. .

PHYSICAL REVIEW B, 2010, 81 (24)

[5] Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2Se3 [J].

Checkelsky, J. G. ;

Hor, Y. S. ;

Cava, R. J. ;

Ong, N. P. .

PHYSICAL REVIEW LETTERS, 2011, 106 (19)

[6] Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3 [J].

Chen, Y. L. ;

Analytis, J. G. ;

Chu, J. -H. ;

Liu, Z. K. ;

Mo, S. -K. ;

Qi, X. L. ;

Zhang, H. J. ;

Lu, D. H. ;

Dai, X. ;

Fang, Z. ;

Zhang, S. C. ;

Fisher, I. R. ;

Hussain, Z. ;

Shen, Z. -X. .

SCIENCE, 2009, 325 (5937) :178-181

[7] Simple tuning of carrier type in topological insulator Bi2Se3 by Mn doping [J].

Choi, Y. H. ;

Jo, N. H. ;

Lee, K. J. ;

Lee, H. W. ;

Jo, Y. H. ;

Kajino, J. ;

Takabatake, T. ;

Ko, K. -T. ;

Park, J. -H. ;

Jung, M. H. .

APPLIED PHYSICS LETTERS, 2012, 101 (15)

[8] Topological insulators with inversion symmetry [J].

Fu, Liang ;

Kane, C. L. .

PHYSICAL REVIEW B, 2007, 76 (04)

[9] Colloquium: Topological insulators [J].

Hasan, M. Z. ;

Kane, C. L. .

REVIEWS OF MODERN PHYSICS, 2010, 82 (04) :3045-3067

[10] Surface-Dominated Conduction in a 6 nm thick Bi2Se3 Thin Film [J].

He, Liang ;

Xiu, Faxian ;

Yu, Xinxin ;

Teague, Marcus ;

Jiang, Wanjun ;

Fan, Yabin ;

Kou, Xufeng ;

Lang, Murong ;

Wang, Yong ;

Huang, Guan ;

Yeh, Nai-Chang ;

Wang, Kang L. .

NANO LETTERS, 2012, 12 (03) :1486-1490

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