Hyperbranched Polymers for Photolithographic Applications - Towards Understanding the Relationship between Chemical Structure of Polymer Resin and Lithographic Performances

被引:40
作者
Chochos, Christos L. [1 ]
Ismailova, Esma [1 ]
Brochon, Cyril [1 ]
Leclerc, Nicolas [1 ]
Tiron, Raluca [2 ]
Sourd, Claire [2 ]
Bandelier, Philippe [2 ]
Foucher, Johann [2 ]
Ridaoui, Hassan [3 ]
Dirani, Ali [3 ]
Soppera, Olivier [3 ]
Perret, Damien [4 ]
Brault, Christophe [4 ]
Serra, Christophe A. [1 ]
Hadziioannou, Georges [1 ]
机构
[1] Univ Strasbourg, Ecole Europeenne Chim Polymeres & Mat, Lab Ingn Polymeres Hautes Technol, UMR 7165, F-67087 Strasbourg, France
[2] CEA Leti Minatec, Lithog Lab, F-38054 Grenoble, France
[3] Univ Haute Alsace, UMR 7525, CNRS, Dept Photochim Gen, F-68058 Mulhouse, France
[4] CEA Grenoble, Rohm & Haas Elect Mat, F-38054 Grenoble 9, France
关键词
RADICAL POLYMERIZATION; RAFT POLYMERIZATION; AMPLIFICATION; COPOLYMERS; MONOLAYERS;
D O I
10.1002/adma.200801715
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A chemically amplified resist based on a hyperbranched polymer resin is demonstrated for the first time. The hyperbranched polymer is synthesized using the atom-transfer radical polymerization (ATRP) technique, and resists prepared from this hyperbranched polymer present good pattern profiles and line-edge roughness (3 sigma) values comparable to those of the reference (commercial) resist.
引用
收藏
页码:1121 / 1125
页数:5
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