Hyperbranched Polymers for Photolithographic Applications - Towards Understanding the Relationship between Chemical Structure of Polymer Resin and Lithographic Performances

被引：40

作者：

Chochos, Christos L. ^{[1
]}

Ismailova, Esma ^{[1
]}

Brochon, Cyril ^{[1
]}

Leclerc, Nicolas ^{[1
]}

Tiron, Raluca ^{[2
]}

Sourd, Claire ^{[2
]}

Bandelier, Philippe ^{[2
]}

Foucher, Johann ^{[2
]}

Ridaoui, Hassan ^{[3
]}

Dirani, Ali ^{[3
]}

Soppera, Olivier ^{[3
]}

Perret, Damien ^{[4
]}

Brault, Christophe ^{[4
]}

Serra, Christophe A. ^{[1
]}

Hadziioannou, Georges ^{[1
]}

机构：

[1] Univ Strasbourg, Ecole Europeenne Chim Polymeres & Mat, Lab Ingn Polymeres Hautes Technol, UMR 7165, F-67087 Strasbourg, France

[2] CEA Leti Minatec, Lithog Lab, F-38054 Grenoble, France

[3] Univ Haute Alsace, UMR 7525, CNRS, Dept Photochim Gen, F-68058 Mulhouse, France

[4] CEA Grenoble, Rohm & Haas Elect Mat, F-38054 Grenoble 9, France

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 10-11期

关键词：

RADICAL POLYMERIZATION; RAFT POLYMERIZATION; AMPLIFICATION; COPOLYMERS; MONOLAYERS;

D O I：

10.1002/adma.200801715

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A chemically amplified resist based on a hyperbranched polymer resin is demonstrated for the first time. The hyperbranched polymer is synthesized using the atom-transfer radical polymerization (ATRP) technique, and resists prepared from this hyperbranched polymer present good pattern profiles and line-edge roughness (3 sigma) values comparable to those of the reference (commercial) resist.

引用

收藏

页码：1121 / 1125

页数：5

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