Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of nMOSFETs

被引：25

作者：

Zhang, E. X. ^{[1
,2
]}

Fleetwood, D. M. ^{[1
,2
]}

Pate, N. D. ^{[1
,2
]}

Reed, R. A. ^{[1
,2
]}

Witulski, A. F. ^{[1
,2
]}

Schrimpf, R. D. ^{[1
,2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Inst Space & Def Elect, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 06期

关键词：

Impedance; RF CMOS; time-domain-reflectometry; total ionizing dose; CMOS; LEAKAGE; DEPENDENCE;

D O I：

10.1109/TNS.2013.2285129

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have performed time-domain reflectometry (TDR) measurements on nMOSFETs before and after irradiation on time scales relevant to MOS radio-frequency response. The decrease in effective impedance of MOSFETs with ionizing radiation exposure is greater for transistors biased in the off-state (all pins grounded) during TDR measurement than for transistors biased in the on-state (V-G high and the other terminals grounded). The increased admittance after irradiation is observable primarily in the off-state measurement. The increases in admittance (decreases in effective impedance) with TID correlate closely with decreases in trans-resistance at 0 V. These decreases result from increases in radiation-induced oxide-trap charge and interface-trap charge in the gate and/or shallow-trench isolation oxides.

引用

页码：4470 / 4475

页数：6

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