Influence of Cu substrate topography on the growth morphology of chemical vapour deposited graphene

被引：15

作者：

Xiao, Ye ^{[1
]}

Kim, HoKwon ^{[2
]}

Mattevi, Cecilia ^{[2
]}

Chhowalla, Manish ^{[3
]}

Maher, Robert C. ^{[1
]}

Cohen, Lesley F. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England

[2] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[3] Rutgers State Univ, Dept Mat Sci & Engn, Piscataway, NJ 08854 USA

来源：

CARBON | 2013年 / 65卷

基金：

英国工程与自然科学研究理事会;

关键词：

RAMAN-SPECTROSCOPY; FILMS; NUCLEATION; SPECTRUM; CARBON;

D O I：

10.1016/j.carbon.2013.06.090

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Raman spectroscopic maps were used to study the local properties of graphene films as grown on corrugated copper foils, by chemical vapour deposition, and after transfer onto SiO2(300 nm)/Si substrates. Analysis of the Raman peaks show the films exhibit a striped periodic pattern of single- and bi-layer graphene. By performing simultaneous AFM-Raman line maps of the as grown film on Cu we find that the layer growth shows a strong correlation to substrate topography. As a result, compressively strained non-AB stacked bi-layer graphene forms preferentially along the ridges, whilst single-layer graphene grows inside the trenches, of the Cu foil topography. These experimental results suggest that surface mobility is not the dominating factor determining control of layer number in such growth regimes. (C) 2013 The Authors. Published by Elsevier Ltd. All rights reserved.

引用

页码：7 / 12

页数：6

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