Compliant ferroelastic domains in epitaxial Pb(Zr, Ti)O3 thin films

被引：24

作者：

Feigl, L. l ^{[1
]}

McGilly, L. J. ^{[1
]}

Sandu, C. S. ^{[1
]}

Setter, N. ^{[1
]}

机构：

[1] EPFL Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 17期

基金：

瑞士国家科学基金会; 欧洲研究理事会;

关键词：

WALLS; ARCHITECTURES; POLARIZATION; CONDUCTION; BATIO3;

D O I：

10.1063/1.4874835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordered patterns of highly compliant ferroelastic domains have been created by use of tensile strained epitaxial Pb(Zr, Ti)O-3 thin films, of very low defect density, grown on DyScO3 substrates. The effect of 180 degrees switching on well-ordered a/c 90 degrees domain patterns is investigated by a combination of transmission electron microscopy, piezoelectric force microscopy, and X-ray diffraction. It is shown that ferroelastic a-domains, having an in-plane polarization, can be created and completely removed on a local level by an out-of-plane electric field. The modifications of the ferroelastic domain pattern can be controlled by varying the parameters used during switching with a piezoresponse force microscope to produce the desired arrangement. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 26 条

[21]

Seidel J, 2009, NAT MATER, V8, P229, DOI [10.1038/NMAT2373, 10.1038/nmat2373]

[22] Ferroelectric thin films: Review of materials, properties, and applications [J].

Setter, N. ;

Damjanovic, D. ;

Eng, L. ;

Fox, G. ;

Gevorgian, S. ;

Hong, S. ;

Kingon, A. ;

Kohlstedt, H. ;

Park, N. Y. ;

Stephenson, G. B. ;

Stolitchnov, I. ;

Tagantsev, A. K. ;

Taylor, D. V. ;

Yamada, T. ;

Streiffer, S. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)

[23] Free-electron gas at charged domain walls in insulating BaTiO3 [J].

Sluka, Tomas ;

Tagantsev, Alexander K. ;

Bednyakov, Petr ;

Setter, Nava .

NATURE COMMUNICATIONS, 2013, 4

[24] Thin film piezoelectrics for MEMS [J].

Trolier-McKinstry, S ;

Muralt, P .

JOURNAL OF ELECTROCERAMICS, 2004, 12 (1-2) :7-17

[25] Threading dislocations in epitaxial ferroelectric PbZr0.2Ti0.8O3 films and their effect on polarization backswitching [J].

Vrejoiu, I. ;

Le Rhun, G. ;

Zakharov, N. D. ;

Hesse, D. ;

Pintilie, L. ;

Alexe, M. .

PHILOSOPHICAL MAGAZINE, 2006, 86 (28) :4477-4486

[26] Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown, defect-free single-crystalline films [J].

Vrejoiu, Ionela ;

Le Rhun, Gwenael ;

Pintilie, Lucian ;

Hesse, Dietrich ;

Alexe, Marin ;

Goesele, Ulrich .

ADVANCED MATERIALS, 2006, 18 (13) :1657-+

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