Compliant ferroelastic domains in epitaxial Pb(Zr, Ti)O3 thin films

被引：24

作者：

Feigl, L. l ^{[1
]}

McGilly, L. J. ^{[1
]}

Sandu, C. S. ^{[1
]}

Setter, N. ^{[1
]}

机构：

[1] EPFL Swiss Fed Inst Technol, Ceram Lab, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 17期

基金：

瑞士国家科学基金会; 欧洲研究理事会;

关键词：

WALLS; ARCHITECTURES; POLARIZATION; CONDUCTION; BATIO3;

D O I：

10.1063/1.4874835

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ordered patterns of highly compliant ferroelastic domains have been created by use of tensile strained epitaxial Pb(Zr, Ti)O-3 thin films, of very low defect density, grown on DyScO3 substrates. The effect of 180 degrees switching on well-ordered a/c 90 degrees domain patterns is investigated by a combination of transmission electron microscopy, piezoelectric force microscopy, and X-ray diffraction. It is shown that ferroelastic a-domains, having an in-plane polarization, can be created and completely removed on a local level by an out-of-plane electric field. The modifications of the ferroelastic domain pattern can be controlled by varying the parameters used during switching with a piezoresponse force microscope to produce the desired arrangement. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 26 条

[1] Nanoscale polarization switching mechanisms in multiferroic BiFeO3 thin films [J].

Bea, H. ;

Ziegler, B. ;

Bibes, M. ;

Barthelemy, A. ;

Paruch, P. .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2011, 23 (14)

[2]

Catalan G, 2011, NAT MATER, V10, P963, DOI [10.1038/nmat3141, 10.1038/NMAT3141]

[3] Formation of 90° elastic domains during local 180° switching in epitaxial ferroelectric thin films [J].

Chen, L ;

Ouyang, J ;

Ganpule, CS ;

Nagarajan, V ;

Ramesh, R ;

Roytburd, AL .

APPLIED PHYSICS LETTERS, 2004, 84 (02) :254-256

[4] Nanoscale Control of Domain Architectures in BiFeO3 Thin Films [J].

Chu, Ying-Hao ;

He, Qing ;

Yang, Chan-Ho ;

Yu, Pu ;

Martin, Lane W. ;

Shafer, Padraic ;

Ramesh, R. .

NANO LETTERS, 2009, 9 (04) :1726-1730

[5] A model for fatigue in ferroelectric perovskite thin films [J].

Dawber, M ;

Scott, JF .

APPLIED PHYSICS LETTERS, 2000, 76 (08) :1060-1062

[6]

Feigl L., NAT COMMUN UNPUB

[7] Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching [J].

Gao, Peng ;

Britson, Jason ;

Jokisaari, Jacob R. ;

Nelson, Christopher T. ;

Baek, Seung-Hyub ;

Wang, Yiran ;

Eom, Chang-Beom ;

Chen, Long-Qing ;

Pan, Xiaoqing .

NATURE COMMUNICATIONS, 2013, 4

[8] Conduction at Domain Walls in Insulating Pb(Zr0.2Ti0.8)O3 Thin Films [J].

Guyonnet, Jill ;

Gaponenko, Iaroslav ;

Gariglio, Stefano ;

Paruch, Patrycja .

ADVANCED MATERIALS, 2011, 23 (45) :5377-+

[9] Persistent step-flow growth of strained films on vicinal substrates [J].

Hong, W ;

Lee, HN ;

Yoon, M ;

Christen, HM ;

Lowndes, DH ;

Suo, ZG ;

Zhang, ZY .

PHYSICAL REVIEW LETTERS, 2005, 95 (09)

[10] Atomically Defined Rare-Earth Scandate Crystal Surfaces [J].

Kleibeuker, Josee E. ;

Koster, Gertjan ;

Siemons, Wolter ;

Dubbink, David ;

Kuiper, Bouwe ;

Blok, Jeroen L. ;

Yang, Chan-Ho ;

Ravichandran, Jayakanth ;

Ramesh, Ramamoorthy ;

ten Elshof, Johan E. ;

Blank, Dave H. A. ;

Rijnders, Guus .

ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (20) :3490-3496

← 1 2 3 →