Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation

被引：29

作者：

Duboz, JY

Reverchon, JL

Adam, D

Damilano, B

Grandjean, N

Semond, F

Massies, J

机构：

[1] Thales Res & Technol, F-91404 Orsay, France

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.1499741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy. Submicron finger spacings were obtained by electron-beam lithography, and allowed us to demonstrate a significant improvement of the responsivity and the spectral selectivity. These results were explained by numerical two-dimensional calculations of the electric-field distribution. The simulation also explained the dependence of the response on applied bias. (C) 2002 American Institute of Physics.

引用

页码：5602 / 5604

页数：3

共 14 条

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Semond F, 2001, PHYS STATUS SOLIDI A, V183, P163, DOI 10.1002/1521-396X(200101)183:1<163::AID-PSSA163>3.0.CO

[12]

2-0

[13] High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy [J].