Submicron metal-semiconductor-metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation

被引：29

作者：

Duboz, JY

Reverchon, JL

Adam, D

Damilano, B

Grandjean, N

Semond, F

Massies, J

机构：

[1] Thales Res & Technol, F-91404 Orsay, France

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.1499741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solar blind metal-semiconductor-metal detectors have been fabricated based on AlGaN grown on Si by molecular-beam epitaxy. Submicron finger spacings were obtained by electron-beam lithography, and allowed us to demonstrate a significant improvement of the responsivity and the spectral selectivity. These results were explained by numerical two-dimensional calculations of the electric-field distribution. The simulation also explained the dependence of the response on applied bias. (C) 2002 American Institute of Physics.

引用

页码：5602 / 5604

页数：3

共 14 条

[1] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[2]

Brown JD, 2000, MRS INTERNET J N S R, V5, P1

[3]

Campbell JC, 2001, PHYS STATUS SOLIDI A, V188, P283, DOI 10.1002/1521-396X(200111)188:1<283::AID-PSSA283>3.0.CO

[4]

2-H

[5] Comprehensive characterization of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN [J].

Carrano, JC ;

Li, T ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (11) :6148-6160

[6] Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN [J].

Carrano, JC ;

Li, T ;

Brown, DL ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 1998, 73 (17) :2405-2407

[7]

Duboz JY, 2001, PHYS STATUS SOLIDI A, V188, P325, DOI 10.1002/1521-396X(200111)188:1<325::AID-PSSA325>3.0.CO

[8]

2-T

[9]

Gil B., 1998, Group III nitride semiconductor compounds: physics and applications

[10] AlGaN metal-semiconductor-metal photodiodes [J].

Monroy, E ;

Calle, F ;

Muñoz, E ;

Omnès, F .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3401-3403

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