Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods

被引：1
|
作者：
Mudryi, A. V. [1 ]
Karotki, A. V. [1 ]
Yakushev, M. V. [2 ]
Martin, R. [2 ]
机构：
[1] Natl Acad Sci Belarus, Sci Pract Mat Res Ctr, Minsk 22072, BELARUS
[2] Univ Strathclyde, Glasgow, Lanark, Scotland
来源：
JOURNAL OF APPLIED SPECTROSCOPY | 2009年 / 76卷 / 02期
基金：
英国工程与自然科学研究理事会;
关键词：
CuInS2; photoluminescence; exciton; SOLAR-CELLS; EDGE; LUMINESCENCE; EXCITON;
D O I：
10.1007/s10812-009-9163-5
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chemical vapor transport (CVT) has been investigated at 4.2, 78, and 300 K. Intense emission in the near-band-edge region caused by free and bound excitons has been detected for both types of crystals. Taking into account the energy position of the luminescence line of the ground (n = 1) and first excited (n = 2) states, the binding energy for free A excitons has been estimated to be about 19.7 and 18.5 meV for CuInS2 grown by CVT and THM, respectively.
引用
收藏
页码：215 / 219
页数：5
相关论文
共 50 条
  • [1] Photoluminescence of CuInS2 single crystals grown by traveling heater and chemical vapor transport methods
    A. V. Mudryi
    A. V. Karotki
    M. V. Yakushev
    R. Martin
    Journal of Applied Spectroscopy, 2009, 76 : 215 - 219
  • [2] Annealing Effects of CuInS2 Single Crystals Grown by Traveling Heater Method
    Yoshino, Kenji
    Nishimoto, Masayuki
    Shirakata, Sho
    Miyake, Hideto
    Hiramatsu, Kazumasa
    Yoneta, Minoru
    Ikari, Tetsuo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 56 - 57
  • [3] Defect states in CuInS2 crystals grown by traveling heater method
    Onishi, T
    Abe, K
    Miyoshi, Y
    Iwai, M
    Wakita, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (1B): : 722 - 724
  • [4] Piezoelectric photoacoustic spectra of bulk CuInS2 single crystals grown by the traveling heater method
    Yoshino, K
    Nishimoto, M
    Fukuyama, A
    Yokoyama, H
    Maeda, K
    Miyake, H
    Sugiyama, K
    Ikari, T
    1998 IEEE ULTRASONICS SYMPOSIUM - PROCEEDINGS, VOLS 1 AND 2, 1998, : 1239 - 1242
  • [5] Photoluminescence of Yb3+-doped CuInS2 single crystals prepared by In-flux and chemical vapor transport methods
    Tsujii, N
    Imanaka, Y
    Takamasu, T
    Kitazawa, H
    Kido, G
    JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 408 : 791 - 795
  • [6] Photoreflectance of CuInS2 single crystal prepared by traveling heater method
    Shirakata, S
    Miyake, H
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) : 2021 - 2024
  • [7] Investigations of CVT Grown CuInS2 Single Crystals
    Savchuk, V. A.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 69 - 70
  • [8] Mechanistic insights into transport properties of chemical vapour transport grown CuInS2 single crystal
    Giri, Ranjan Kr.
    Chaki, Sunil H.
    Khimani, Ankurkumar J.
    Deshpande, Milind P.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2023, 959
  • [9] Photoluminescence excitation spectra of CuInS2 crystals
    Wakita, K
    Fujita, F
    Yamamoto, N
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) : 1292 - 1296
  • [10] High pressure studies of CVT grown CuInS2 single crystals
    Agarwal, MK
    Patel, PD
    Chaki, SH
    Vaidya, SN
    Karunakaran, C
    HIGH PRESSURE RESEARCH, 1996, 15 (03) : 159 - 166
12345