Band Alignment Engineering Towards High Efficiency Carbon-Based Inorganic Planar CsPbIBr2 Perovskite Solar Cells

被引:114
作者
Zhu, Weidong [1 ,2 ]
Zhang, Zeyang [1 ,2 ]
Chai, Wenming [1 ,2 ]
Zhang, Qianni [1 ,2 ]
Chen, Dazheng [1 ,2 ]
Lin, Zhenhua [1 ,2 ]
Chang, Jingjing [1 ,2 ]
Zhang, Jincheng [1 ,2 ]
Zhang, Chunfu [1 ,2 ]
Hao, Yue [1 ,2 ]
机构
[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China
[2] Xidian Univ, Sch Microelect, Shaanxi Joint Key Lab Graphene, Xian 710071, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
band alignment; CsPbIBr2; inorganic; perovskite; solar cells; ELECTRON-TRANSPORT LAYER; DOPED RUTILE TIO2; THEORETICAL-ANALYSIS; INTERFACE; OFFSET; ALPHA-CSPBI3; PERFORMANCE; FABRICATION;
D O I
10.1002/cssc.201900611
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Perovskite CsPbIBr2 is attracting ever-increasing attention for carbon-based, all-inorganic solar cells, owing to its well-balanced band gap and stability features. However, significant interfacial recombination of charge carriers in solar cells fabricated with this active layer, which is intrinsically associated with the unwanted conduction band misalignment between CsPbIBr2 and the commonly used TiO2 electron transport layer, has limited power conversion efficiency (PCE) values. Herein, we demonstrate successful conduction band alignment engineering at the TiO2/CsPbIBr2 heterojunction by modifying TiO2 with CsBr clusters. Such modification triggers a beneficial increase in the conduction band minimum (CBM) of TiO2 from -4.00 to -3.81eV and decreases the work function from 4.11 to 3.86eV, thus promoting favorable band alignment at the heterojunction, suppressing recombination, and improving extraction and transport of charge carriers. As a result, the carbon-based, all-inorganic CsPbIBr2 solar cells exhibit over 20% enhancement in average PCE. The champion device achieves a PCE of 10.71%, a record among pure CsPbIBr2-based cells, open-circuit voltage of 1.261V, and excellent stability.
引用
收藏
页码:2318 / 2325
页数:8
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