High power laser-plasma x-ray source for lithography

被引：2

作者：

Gaeta, CJ ^{[1
]}

Rieger, H ^{[1
]}

Turcu, ICE ^{[1
]}

Forber, RA ^{[1
]}

Cassidy, KL ^{[1
]}

Campeau, SM ^{[1
]}

Powers, MJ ^{[1
]}

Maldonado, JR ^{[1
]}

Morris, JH ^{[1
]}

Foster, RM ^{[1
]}

Smith, HI ^{[1
]}

Lim, MH ^{[1
]}

机构：

[1] JMAR Res Inc, San Diego, CA 92121 USA

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2 | 2002年 / 4688卷

关键词：

x-ray source; x-ray lithography; laser-produced-plasma; diode-pumped-solid-state-laser; GaAs semiconductor devices;

D O I：

10.1117/12.472353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact x-ray source radiates 24 Watts average power of 1nm x-rays in 2pi steradians. The laser produced plasma x-ray source has a 300 W laser driver which is a compact, diode-pumped solid-state Nd:YAG laser system. The x-ray conversion efficiency is 9% of the laser power delivered on target. The x-ray source was used to demonstrate x-ray lithography of 75 nm lines. The x-ray source is optimized for integration with a x-ray stepper to provide a complete x-ray lithography exposure tool for the manufacture of high-speed GaAs devices.

引用

页码：818 / 833

页数：2

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