Composition, surface morphology and electrical characteristics of Al2O3-TiO2 nanolaminates and AlTiO films on silicon

被引：28

作者：

Mikhelashvili, V. ^{[1
]}

Eisenstein, G. ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 01期

关键词：

thin dielectric films; electron beam gun deposition; chemical and structural properties; electrical characterization;

D O I：

10.1016/j.tsf.2005.12.097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We propose and demonstrate Metal-Oxide-Semiconductor structures comprising Al2O3-TiO2 nanolaminate and AlTiO films. Composition, structural and electrical characteristics were studied in detail and compared to TiO2 thin film-based structures. All dielectric films were evaporated using an electron beam gun (EBG) system on unheated p-Si substrate without adding O-2. MOS structures were investigated in detail before and after annealing at up to 950 degrees C in O-2 and N-2 + O-2 environments. The nanolaminate films remain in an amorphous state after annealing at 950 degrees C. The smallest quantum mechanical corrected equivalent oxide thickness measured was similar to 1.37 nm. A large reduction of the leakage current density to 1.8 x 10(-8) A/cm(2) at an electric field of 2 MV/cm was achieved by the annealing process. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：346 / 352

页数：7

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