Polarization dependent asymmetric magneto-resistance features in nanocrystalline diamond films

被引：7
作者：
Bhattacharyya, Somnath [1 ,2 ,3 ]
Churochkin, Dmitry [1 ]
机构：
[1] Univ Witwatersrand, Sch Phys, Nanoscale Transport Phys Lab, ZA-2050 Johannesburg, Johannesburg, South Africa
[2] Univ Witwatersrand, DST NRF Ctr Excellence Strong Mat, ZA-2050 Johannesburg, Johannesburg, South Africa
[3] Univ Leeds, Dept Phys & Astron, Leeds LS2 9JT, W Yorkshire, England
来源：
APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 07期
关键词：
MAGNETIC-FIELD; ULTRANANOCRYSTALLINE DIAMOND; DOPED ULTRANANOCRYSTALLINE; ANDERSON LOCALIZATION; WEAK-LOCALIZATION; TRANSPORT; SUPERLATTICE; CONDUCTIVITY; SYSTEMS; METALS;
D O I：
10.1063/1.4893662
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Polar angle-dependence of magneto-resistance (AMR) in heavily nitrogen-incorporated ultra-nano-crystalline diamond (UNCD) films is recorded by applying high magnetic fields, which shows strong anisotropic features at low temperatures. The temperature-dependence of MR and AMR can reveal transport in the weak-localization regime, which is explained by using a superlattice model for arbitrary values of disorder and angles. While a propagative Fermi surface model explains the negative MR features for low degree of disorder the azimuthal angle-dependent MR shows field dependent anisotropy due to the aligned conducting channels on the layers normal to film growth direction. The analysis of MR and AMR can extract the temperature dependence of dephasing time with respect to the elastic scattering time which not only establishes quasi-two dimensional features in this system but also suggests a potential application in monitoring the performance of UNCD based quantum devices. (C) 2014 AIP Publishing LLC.
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页数：4
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