Polarization dependent asymmetric magneto-resistance features in nanocrystalline diamond films

被引：7

作者：

Bhattacharyya, Somnath ^{[1
,2
,3
]}

Churochkin, Dmitry ^{[1
]}

机构：

[1] Univ Witwatersrand, Sch Phys, Nanoscale Transport Phys Lab, ZA-2050 Johannesburg, Johannesburg, South Africa

[2] Univ Witwatersrand, DST NRF Ctr Excellence Strong Mat, ZA-2050 Johannesburg, Johannesburg, South Africa

[3] Univ Leeds, Dept Phys & Astron, Leeds LS2 9JT, W Yorkshire, England

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 07期

关键词：

MAGNETIC-FIELD; ULTRANANOCRYSTALLINE DIAMOND; DOPED ULTRANANOCRYSTALLINE; ANDERSON LOCALIZATION; WEAK-LOCALIZATION; TRANSPORT; SUPERLATTICE; CONDUCTIVITY; SYSTEMS; METALS;

D O I：

10.1063/1.4893662

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polar angle-dependence of magneto-resistance (AMR) in heavily nitrogen-incorporated ultra-nano-crystalline diamond (UNCD) films is recorded by applying high magnetic fields, which shows strong anisotropic features at low temperatures. The temperature-dependence of MR and AMR can reveal transport in the weak-localization regime, which is explained by using a superlattice model for arbitrary values of disorder and angles. While a propagative Fermi surface model explains the negative MR features for low degree of disorder the azimuthal angle-dependent MR shows field dependent anisotropy due to the aligned conducting channels on the layers normal to film growth direction. The analysis of MR and AMR can extract the temperature dependence of dephasing time with respect to the elastic scattering time which not only establishes quasi-two dimensional features in this system but also suggests a potential application in monitoring the performance of UNCD based quantum devices. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 27 条

[1] Effect of nitrogen on the electronic properties of ultrananocrystalline diamond thin films grown on quartz and diamond substrates [J].

Achatz, P. ;

Williams, O. A. ;

Bruno, P. ;

Gruen, D. M. ;

Garrido, J. A. ;

Stutzmann, M. .

PHYSICAL REVIEW B, 2006, 74 (15)

[2] Low-temperature transport in highly boron-doped nanocrystalline diamond [J].

Achatz, P. ;

Gajewski, W. ;

Bustarret, E. ;

Marcenat, C. ;

Piquerel, R. ;

Chapelier, C. ;

Dubouchet, T. ;

Williams, O. A. ;

Haenen, K. ;

Garrido, J. A. ;

Stutzmann, M. .

PHYSICAL REVIEW B, 2009, 79 (20)

[3] Diamond nanowires and the insulator-metal transition in ultrananocrystalline diamond films [J].

Arenal, R. ;

Bruno, P. ;

Miller, D. J. ;

Bleuel, M. ;

Lal, J. ;

Gruen, D. M. .

PHYSICAL REVIEW B, 2007, 75 (19)

[4] Magnetoresistance of granular superconducting metals in a strong magnetic field [J].

Beloborodov, IS ;

Efetov, KB ;

Larkin, AI .

PHYSICAL REVIEW B, 2000, 61 (13) :9145-9161

[5] Mechanism of high n-type conduction in nitrogen-doped nanocrystalline diamond -: art. no. 125412 [J].

Bhattacharyya, S .

PHYSICAL REVIEW B, 2004, 70 (12) :125412-1

[6] Two-dimensional transport in disordered carbon and nanocrystalline diamond films [J].

Bhattacharyya, Somnath .

PHYSICAL REVIEW B, 2008, 77 (23)

[7] Morphology and electronic structure in nitrogen-doped ultrananocrystalline diamond [J].

Birrell, J ;

Carlisle, JA ;

Auciello, O ;

Gruen, DM ;

Gibson, JM .

APPLIED PHYSICS LETTERS, 2002, 81 (12) :2235-2237

[8] Semiclassical description of angle-dependent magnetoresistance oscillations in quasi-one-dimensional metals [J].

Blundell, SJ ;

Singleton, J .

PHYSICAL REVIEW B, 1996, 53 (09) :5609-5619

[9] Temperature dependence of interlayer magnetoresistance in anisotropic layered metals [J].

Brinkman, Braden A. W. ;

Kennett, Malcolm P. .

PHYSICAL REVIEW B, 2009, 80 (09)

[10] Anderson localization in anisotropic systems at an arbitrary orientation of the magnetic field [J].

Bryksin, VV ;

Kleinert, P .

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1996, 101 (01) :91-96

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