High open-circuit voltage organic photovoltaic cells fabricated using semiconducting copolymers consisting of bithiophene and fluorinated quinoxaline or triazole derivatives

被引:12
作者
Kim, Ji-Hoon [1 ,2 ]
Park, Jong Saek [1 ,2 ]
Kim, Hee Un [1 ,2 ]
Kang, In-Nam [3 ]
Hwang, Do-Hoon [1 ,2 ]
机构
[1] Pusan Natl Univ, Dept Chem, Pusan 609735, South Korea
[2] Pusan Natl Univ, Chem Inst Funct Mat, Pusan 609735, South Korea
[3] Catholic Univ Korea, Dept Chem, Gyeonggido 902, South Korea
基金
新加坡国家研究基金会;
关键词
Low-band-gap semiconducting polymer; Organic photovoltaic cell; Bulk heterojunction; HETEROJUNCTION SOLAR-CELLS; CONJUGATED POLYMERS; TRANSISTORS; EFFICIENCY; MOBILITY;
D O I
10.1016/j.synthmet.2014.04.033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Two new alternating copolymers consisting of bithiophene and fluorinated quinoxaline or fluorinated benzotriazole derivatives, namely, poly[{4,4'-bis(2-ethylhexyl)-2,2'-bithiophene-5,5'-diyl}-alt{6,7-difluoro-5,5-(5,8-di-2-thienyl-2,3-bis(4-octyloxyl)phenyl) quinoxalinel}] (PBT-DFDTQX) and poly[{4,4'-bis(2-ethylhexyl)-2,2'-bithiophene-5,5'-diyl-alt-{4,7-bis(5-thiophen-2-yl)-5,6-difluoro-2(heptadecan-9-yl)-2H-benzo[d][1,2,3]triazole}] (PBT-DFDTBTz), were synthesized by the Stille cross coupling reaction for application in organic photovoltaic cells. The optical band gaps of PBT-DFDTQX and PBT-DFDTBTz were measured to be 1.77 and 1.90 eV, respectively. The synthesized polymers showed relatively deep highest occupied molecular orbital (HOMO) energy levels (-5.52 eV for PBT-DFDTQX and -5.54 eV for PBT-DFDTBTz) owing to the strong electron accepting nature of fluorine. The polymers were used to fabricate bulk heterojunction photovoltaic devices with [6,6]-phenyl C-71-butylic acid methyl ester (PC71 BM) as the electron acceptor. Devices fabricated using PBT-DFDTQX and PBT-DFDTBTz showed the maximum power conversion efficiency (PCE) of 4.01 and 4.22%, respectively, with a high open-circuit voltage of over 0.95 V under AM 1.5G (100 mW/cm(2)) conditions. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:88 / 96
页数:9
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