ZnO thin films prepared on titanium substrate by PLD technique at different substrate temperatures

被引：6

作者：

Zeng, Yong ^{[1
]}

Zhao, Yan ^{[1
]}

Jiang, Yijian ^{[1
]}

机构：

[1] Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

来源：

SURFACE AND INTERFACE ANALYSIS | 2014年 / 46卷 / 09期

基金：

美国国家科学基金会;

关键词：

titanium substrate; Raman spectroscopy; photoluminescence; X-ray diffraction; pulsed laser deposition; zinc oxide; XPS;

D O I：

10.1002/sia.5559

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnO thin films were grown by pulsed laser deposition on titanium substrates at different substrate temperatures ranging from 300 to 700 degrees C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence, and Raman spectroscopy are employed to investigate the change of properties. XRD, XPS, and Raman data showed that the films consisted of TiO2 at high substrate temperature, which will deteriorate the crystallization quality of ZnO films. The optimum temperature for the growth of ZnO films on the Ti substrate is about 500 degrees C in this paper. The ZnO films grown on titanium substrate can be used in direct current, microwave, and medical applications. Copyright (C) 2014 John Wiley & Sons, Ltd.

引用

页码：602 / 606

页数：5

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