FinFET and UTB-How to Make Very Short Channel MOSFETs

被引：10

作者：

Hu, Chenming ^{[1
]}

机构：

[1] Univ Calif Berkeley, Berkeley, CA 94720 USA

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

D O I：

10.1149/05009.0017ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

New materials with enhanced mobility are clearly going to be important to the IC industry. In addition, the leakage current in future short gate transistors must be suppressed somehow. FinFET was developed for this goal. Its fin shape or its 3D nature is not the reason for its ability to suppress the leakage current. A 2D planar short gate structure, Ultra-Thin-Body (UTB), was proposed and demonstrated at the same time as FinFET. Together they illustrate a new scaling principle. Future monolayer semiconductor transistors are naturally UTB and highly scalable.

引用

页码：17 / 20

页数：4

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