S-band hybrid amplifiers based on hydrogenated diamond FETs

被引:4
作者
Ciccognani, Walter [1 ]
Colangeli, Sergio [1 ]
Verona, Claudio [2 ]
Di Pietrantonio, Fabio [3 ]
Cannata, Domenico [3 ]
Benetti, Massimiliano [3 ]
Camarchia, Vittorio [4 ]
Pirola, Marco [4 ]
Longhi, Patrick E. [1 ]
Rinati, Gianluca Verona [2 ]
Marinelli, Marco [2 ]
Limiti, Ernesto [1 ]
机构
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Dept Ind Engn, I-00133 Rome, Italy
[3] Ist Acust & Sensorist Orso Mario Corbino, I-00133 Rome, Italy
[4] Politecn Torino, Elect & Telecommun Dept, I-10129 Turin, Italy
关键词
H-TERMINATED DIAMOND;
D O I
10.1038/s41598-020-75832-w
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The first realizations of S-band hybrid amplifiers based on hydrogenated-diamond (H-diamond) FETs are reported. As test vehicles of the adopted H-diamond technology at microwave frequencies, two designs are proposed: one, oriented to low-noise amplification, the other, oriented to high-power operation. The two amplifying stages are so devised as to be cascaded into a two-stage amplifier. The activities performed, from the technological steps to characterization, modelling, design and realization are illustrated. Measured performance demonstrates, for the low-noise stage, a noise figure between 7 and 8 dB in the 2-2.5 GHz bandwidth, associated with a transducer gain between 5 and 8 dB. The OIP3 at 2 GHz is 21 dBm. As to the power-oriented stage, its transducer gain is 5-6 dB in the 2-2.5 GHz bandwidth. The 1-dB output compression point at 2 GHz is 20 dBm whereas the OIP3 is 33 dBm. Cascading the measured S-parameters of the two stages yields a transducer gain of 15 +/- 1.2 dB in the 2-3 GHz bandwidth.
引用
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页数:9
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