Study of pulsed laser deposition of RuO2 and SrRuO3 thin films

被引:36
作者
Fang, X [1 ]
Kobayashi, T [1 ]
机构
[1] Osaka Univ, Fac Engn Sci, Toyonaka, Osaka 5608531, Japan
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / Suppl 1期
关键词
D O I
10.1007/s003390051481
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, the pulsed laser ablation of RuO2 and SrRuO3 (SRO) is investigated by observing the fluorescence from excited atoms in the plume by using a framing streak camera. Vaporization, phase explosion and boiling are suggested to play the main roles in the processes for the interaction between the laser beam and target. Collisions and adiabatic expansion are also suggested before particles move forward with shifted Maxwellian spatial distribution. In O-2 pressure, numerous collisions between fast and slow atoms occur and result in the exchange of speeds. The structural and electrical (conductivity and work-function) properties of RuO2 ana SRO thin films are measured. Epitaxial SRO growth was obtained at growth temperatures down to 350 degrees C. Ferroelectric and high- dielectric thin-him capacitors with RuO2 or SRO thin film electrode are also studied.
引用
收藏
页码:S587 / S590
页数:4
相关论文
共 12 条
  • [1] INFLUENCE OF PLATINUM INTERLAYERS ON THE ELECTRICAL-PROPERTIES OF RUO2/PB(ZR0.53TI0.47)O-3/RUO2 CAPACITOR HETEROSTRUCTURES
    ALSHAREEF, HN
    BELLUR, KR
    KINGON, AI
    AUCIELLO, O
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (02) : 239 - 241
  • [2] Characterization of a sol-gel derived Pb(Zr, Ti)O-3 thin-film capacitor with polycrystalline SrRuO3 electrodes
    Aoki, K
    Murayama, I
    Fukuda, Y
    Nishimura, A
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (6A): : L690 - L692
  • [3] AN INVESTIGATION OF LASER ABLATION AND DEPOSITION OF Y-BA-CU-O IN AN OXYGEN ENVIRONMENT
    DYER, PE
    ISSA, A
    KEY, PH
    [J]. APPLIED SURFACE SCIENCE, 1990, 46 (1-4) : 89 - 95
  • [4] Growth of RuO2 thin films on a MgO substrate by pulsed laser deposition method
    Fang, XD
    Tachiki, M
    Kobayashi, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (4B): : L511 - L514
  • [5] Excimer-laser ablation of RuO2 observed by a streak camera
    Fang, XD
    Tachiki, M
    Kobayashi, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (04) : 2402 - 2407
  • [6] DIELECTRIC-PROPERTIES OF SRTIO3 EPITAXIAL FILM AND THEIR APPLICATION TO MEASUREMENT OF WORK FUNCTION OF YBA2CU3OY EPITAXIAL FILM
    HIRANO, T
    UEDA, M
    MATSUI, K
    FUJII, T
    SAKUTA, K
    KOBAYASHI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (9B): : L1345 - L1347
  • [7] STRUCTURE AND PROPERTIES OF EPITAXIAL BA0.5SR0.5TIO3/SRRUO3/ZRO2 HETEROSTRUCTURE ON SI GROWN BY OFF-AXIS SPUTTERING
    HOU, SY
    KWO, J
    WATTS, RK
    CHENG, JY
    FORK, DK
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (10) : 1387 - 1389
  • [8] Domain structure of epitaxial SrRuO3 thin films on miscut (001) SrTiO3 substrates
    Jiang, JC
    Tian, W
    Pan, XQ
    Gan, Q
    Eom, CB
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (23) : 2963 - 2965
  • [9] PULSED-LASER EVAPORATION TECHNIQUE FOR DEPOSITION OF THIN-FILMS - PHYSICS AND THEORETICAL-MODEL
    SINGH, RK
    NARAYAN, J
    [J]. PHYSICAL REVIEW B, 1990, 41 (13): : 8843 - 8859
  • [10] SrTiO3 films epitaxially grown by eclipse pulsed laser deposition and their electrical characterization
    Tachiki, M
    Noda, M
    Yamada, K
    Kobayashi, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (10) : 5351 - 5357