Mid-infrared luminescence from Sn-modified PbSe quantum dots in silicate glasses

被引：27

作者：

Zhang, Jihong ^{[1
,2
]}

Liu, Chao ^{[3
]}

Heo, Jong ^{[1
,2
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol POSTECH, Div Adv Nucl Engn, Pohang 790784, South Korea

[3] Wuhan Univ Technol, State Key Lab Silicate Mat Architectures, Wuhan 430070, Hubei, Peoples R China

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2016年 / 431卷

基金：

新加坡国家研究基金会;

关键词：

Quantum dots; Photoluminescence; Semiconductor band gap; Lead selenide; SEMICONDUCTOR NANOCRYSTALS; OPTICAL-PROPERTIES; BAND-GAP; MICROCRYSTALS; CLUSTERS;

D O I：

10.1016/j.jnoncrysol.2015.04.010

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Infrared photoluminescence (PL) properties of Sn-modified PbSe quantum dots (QDs) in silicate glass were investigated. The QDs' sizes were controlled by changing the heat treatment temperatures. The longest absorption peak from Sn-modified PbSe QDs was centered at 2590 nm, and the PL band extended to 2650 nm. X-ray diffraction peaks indicated that the PbSe QDs formed in the glass matrix although low Sn content resulted in no obvious difference between PbSe QDs and Sn-modified PbSe QDs. Sn was found in QDs that proves the incorporation of Sn into PbSe QDs. The proposed composition of the Sn-modified PbSe QDs was Pb0.92Sn0.08Se with a band gap of similar to 0.13 eV; the small amount of Sn changed the energy structure of QDs, narrowed the band-gap, and increased the PL emission wavelength. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：93 / 96

页数：4

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