Deep-Level Transient Spectroscopy of InAs/GaAs Quantum Dot Superlattices

被引：2
|
作者：
Sobolev, M. M. [1 ]
Nevedomskii, V. N. [1 ]
Zolotareva, R. V. [1 ]
Vasil'ev, A. P. [1 ]
Ustinov, V. M. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 | 2014年 / 1583卷
关键词：
Quantum dot superlattice; Wannier-Stark; deep level transient; ABSORPTION; STATES;
D O I：
10.1063/1.4865646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (Ur) and filling voltage pulse U-f.
引用
收藏
页码：248 / 251
页数：4
相关论文
共 50 条
  • [41] Hall effect in InAs/GaAs superlattices with quantum dots: Identifying the presence of deep level defects
    Rubinger, RM
    Ribeiro, GM
    de Oliveira, AG
    Albuquerque, HA
    da Silva, RL
    Rodrigues, WN
    Moreira, MV
    BRAZILIAN JOURNAL OF PHYSICS, 2004, 34 (2B) : 626 - 628
  • [42] Interfacial deep-level defects as probes for ultrathin InAs insertions in GaAs
    Krispin, P
    Lazzari, JL
    Kostial, H
    JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 267 - 270
  • [43] Emission of Electrons in InAs Quantum Dot Memory Devices Studied by Drain-Current Deep Level Transient Spectroscopy
    Ooike, Noboru
    Motohisa, Junichi
    Fukui, Takashi
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 567 - 570
  • [44] DETERMINATION OF DEEP-LEVEL PARAMETERS BY ISOTHERMAL DEEP-LEVEL TRANSIENT SPECTROSCOPY WITH OPTICAL-EXCITATION
    STUCHLIKOVA, L
    HARMATHA, L
    NAGL, V
    GAZI, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1993, 138 (01): : 241 - 248
  • [45] Deep level transient spectroscopy and pseudopotential superlattice calculation for an InAs monolayer embedded in GaAs
    Pickenhain, R
    Schmidt, H
    Gottschalch, V
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (02) : 948 - 959
  • [46] Single dot spectroscopy on InAs/GaAs piezoelectric quantum dots
    Dialynas, G. E.
    Chatzidimitriou, N.
    Kalliakos, S.
    Tsintzos, S.
    Savvidis, P. G.
    Hatzopoulos, Z.
    Pelekanos, N. T.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (11): : 2566 - 2568
  • [47] Laplace-Transform Deep-Level Spectroscopy Characterization of the Intrinsic and Deep-Level States in Self-Assembled In As Quantum-Dot Structures
    Lin, S. W.
    Song, A. M.
    Peaker, A. R.
    PHYSICS OF SEMICONDUCTORS, 2009, 1199 : 313 - 314
  • [48] Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy
    Ghosh, S
    Kochman, B
    Singh, J
    Bhattacharya, P
    APPLIED PHYSICS LETTERS, 2000, 76 (18) : 2571 - 2573
  • [49] DEEP-LEVEL TRANSIENT SPECTROSCOPY OF ANISOTROPIC SEMICONDUCTOR GATE
    PAL, D
    PAL, S
    BOSE, DN
    BULLETIN OF MATERIALS SCIENCE, 1994, 17 (04) : 347 - 354
  • [50] FREQUENCY-SCANNED DEEP-LEVEL TRANSIENT SPECTROSCOPY
    HENRY, PM
    MEESE, JM
    FARMER, JW
    LAMP, CD
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 628 - 630
12345