Deep-Level Transient Spectroscopy of InAs/GaAs Quantum Dot Superlattices

被引：2
|
作者：
Sobolev, M. M. [1 ]
Nevedomskii, V. N. [1 ]
Zolotareva, R. V. [1 ]
Vasil'ev, A. P. [1 ]
Ustinov, V. M. [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 | 2014年 / 1583卷
关键词：
Quantum dot superlattice; Wannier-Stark; deep level transient; ABSORPTION; STATES;
D O I：
10.1063/1.4865646
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Deep level transient spectroscopy (DLTS) has been applied to study the carrier emission from states of a 10-layer system of tunnel-coupled vertically correlated quantum dots (VCQDs) in p-n InAs/GaAs heterostructures with different widths of GaAs spacers under varied reverse bias (Ur) and filling voltage pulse U-f.
引用
收藏
页码：248 / 251
页数：4
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