Modeling of optical gain in GaInNAs quantum wells by using 8-band and 10-band models

被引：0
作者：
Gladysiewicz, M. [1 ]
Wartak, M. S. [1 ]
机构：
[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXII | 2014年 / 8980卷
关键词：
Optical gain; GaInNAs; ELECTRON EFFECTIVE-MASS; ALLOYS; SEMICONDUCTORS;
D O I：
10.1117/12.2036267
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We analyzed two approaches to calculate band structure and optical gain in GaInNAs/GaAs quantum well structures based on 10-band and 8-band kp models. The obtained results are discussed in the context of importance of conduction band nonparabolicity. We also briefly report on the influence of hydrostatic pressure on optical gain in this system.
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页数：6
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