Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

被引：9

作者：

Jing, Qiang ^{[1
]}

Wu, Guoguang ^{[1
]}

Zhang, Yuantao ^{[1
]}

Gao, Fubin ^{[1
]}

Cai, Xupu ^{[1
]}

Zhao, Yang ^{[1
]}

Li, Wancheng ^{[1
]}

Du, Guotong ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 06期

基金：

中国国家自然科学基金;

关键词：

MOLECULAR-BEAM EPITAXY; RF-MBE; INN; GROWTH; ELLIPSOMETRY; OFFSET;

D O I：

10.1063/1.4892525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence band offset (VBO) of InN/6H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be -0.10 +/- 0.23 eV and the conduction band offset is deduced to be -2.47 +/- 0.23 eV, indicating that the heterojunction has a type-II band alignment. The accurate determination of the valence and conduction band offsets is important for applications and analysis of InN/6H-SiC optoelectronic devices. (c) 2014 AIP Publishing LLC.

引用

页数：5

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