Rayleigh analysis and dielectric dispersion in polycrystalline 0.5(Ba0.7Ca0.3)TiO3-0.5Ba(Zr0.2Ti0.8)O3 ferroelectric thin films by domain-wall pinning element modeling

被引:3
作者
Becker, M. [1 ,2 ,3 ]
Burkhardt, C. J. [1 ]
Schroeppel, B. [1 ]
Kleiner, R. [2 ,3 ]
Koelle, D. [2 ,3 ]
机构
[1] Univ Tubingen, NMI Nat & Med Sci Inst, Markwiesenstr 55, D-72770 Reutlingen, Germany
[2] Univ Tubingen, Phys Inst, Ctr Quantum Sci CQ, Morgenstelle 14, D-72076 Tubingen, Germany
[3] Univ Tubingen, LISA, Morgenstelle 14, D-72076 Tubingen, Germany
关键词
IMPEDANCE; DEPENDENCE; BEHAVIOR;
D O I
10.1063/5.0025109
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use impedance spectroscopy to investigate the dielectric response in polycrystalline, lead-free 0.5(Ba-0.Ca-7(0.3))TiO3-0.5Ba(Zr0.2Ti0.8)O-3 (BCZT) ferroelectric thin films as a function of amplitude E-0 and frequency f of an applied ac electric field. Impedance spectra from f = 10 Hz to 1 MHz were collected at different E-0 on polycrystalline BCZT capacitor stacks, grown by pulsed laser deposition on platinized Si substrates and covered with Au electrodes. Deconvolution of the spectra is achieved by fitting the measured impedance to the impedance of an equivalent-circuit model of the capacitor stacks, including a recently proposed domain-wall pinning element ZDW. From an extended data analysis, we quantify the coupling strength between dielectric nonlinearity and frequency dispersion in the BCZT thin films, and we obtain a schematic diagram of the different domain-wall-motion regimes. Our results indicate that the presence of grain boundaries in BCZT reduces the coupling strength and suppresses the motion of internal domain-wall segments and also the irreversible center-of-mass motion of the domain walls.
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页数:8
相关论文
共 34 条
[1]   BaTiO3-based piezoelectrics: Fundamentals, current status, and perspectives [J].
Acosta, M. ;
Novak, N. ;
Rojas, V. ;
Patel, S. ;
Vaish, R. ;
Koruza, J. ;
Rossetti, G. A., Jr. ;
Roedel, J. .
APPLIED PHYSICS REVIEWS, 2017, 4 (04)
[2]  
Agarwal P., 1995, J ELECTROCHEM SOC, V142, P1885, DOI [10.1149/1.2044210, DOI 10.1149/1.2044210]
[3]   Domain wall contributions to the properties of piezoelectric thin films [J].
Bassiri-Gharb, Nazanin ;
Fujii, Ichiro ;
Hong, Eunki ;
Trolier-McKinstry, Susan ;
Taylor, David V. ;
Damjanovic, Dragan .
JOURNAL OF ELECTROCERAMICS, 2007, 19 (01) :49-65
[4]  
Becker M., 2020, ARXIV200804786
[5]   Logarithmic frequency dependence of the piezoelectric effect due to pinning of ferroelectric-ferroelastic domain walls [J].
Damjanovic, D .
PHYSICAL REVIEW B, 1997, 55 (02) :R649-R652
[6]   Dielectric response due to stochastic motion of pinned domain walls [J].
Fedorenko, AA ;
Mueller, V ;
Stepanow, S .
PHYSICAL REVIEW B, 2004, 70 (22) :224104-1
[7]   IMPEDANCE AND DIELECTRIC-SPECTROSCOPY REVISITED - DISTINGUISHING LOCALIZED RELAXATION FROM LONG-RANGE CONDUCTIVITY [J].
GERHARDT, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1994, 55 (12) :1491-1506
[8]   Substrate Clamping Effects on Irreversible Domain Wall Dynamics in Lead Zirconate Titanate Thin Films [J].
Griggio, F. ;
Jesse, S. ;
Kumar, A. ;
Ovchinnikov, O. ;
Kim, H. ;
Jackson, T. N. ;
Damjanovic, D. ;
Kalinin, S. V. ;
Trolier-McKinstry, S. .
PHYSICAL REVIEW LETTERS, 2012, 108 (15)
[9]   Rayleigh behaviour and the threshold field in ferroelectric ceramics [J].
Hall, DA .
FERROELECTRICS, 1999, 223 (1-4) :319-328
[10]  
Hoel PG., 1962, INTRO MATH STAT