Simple Epitaxial Lateral Overgrowth Process as a Strategy for Photonic Integration on Silicon

被引：24
|
作者：
Kataria, Himanshu [1 ]
Metaferia, Wondwosen [1 ]
Junesand, Carl [1 ]
Zhang, Chong [2 ]
Julian, Nick [2 ]
Bowers, John E. [2 ]
Lourdudoss, Sebastian [1 ]
机构：
[1] Royal Inst Technol, S-10044 Stockholm, Sweden
[2] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2014年 / 20卷 / 04期
基金：
瑞典研究理事会;
关键词：
Monolithic integration of III-Vs on Si; integrated photonics; III-V lasers on Si; ELOG; QUANTUM-DOT LASERS; INDIUM-PHOSPHIDE; CW OPERATION; SI; STRAIN; GAAS;
D O I：
10.1109/JSTQE.2013.2294453
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we propose a strategy to achieve monolithic integration of III-Vs on Si for photonic integration through a simple process. By mimicking the SiO2/Si/SiO2 waveguide necessary to couple light from the gain medium on its top, we adopt a similar to 2 mu m thick silicon dioxide mask for epitaxial lateral overgrowth (ELOG) of InP on Si. The ELOG InP layer as wells as the subsequently grown quantum wells (similar to 1. 55 mu m) have been analyzed by photoluminescence and transmission electron microscopy and found to have high optical quality and very good interface. The studies are strategically important for a monolithic platform that holds great potential in addressing the future need to have an integrated platform consisting of both III-Vs and Si on same chip.
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收藏
页数：7
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