Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

被引：7
|
作者：
Bessolov, V. N. [2 ,1 ]
Konenkova, E. V.
Kukushkin, S. A.
Myasoedov, A. V.
Osipov, A. V.
Rodin, S. N.
Shcheglov, M. P.
Feoktistov, N. A.
机构：
[1] Russian Acad Sci, Inst Problems Mech Engn, St Petersburg 199178, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2014年 / 40卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
GALLIUM NITRIDE; DIRECTION; GROWTH;
D O I：
10.1134/S1063785014050046
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new method of synthesis of semipolar gallium nitride on a silicon substrate using the technology of solid-phase epitaxy of 3C-SiC nanocrystals has been suggested. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables one to form epitaxial layers of semipolar gallium nitride with layer deviation from the polar position of the c axis of a wurtzite crystal by an angle of 48A degrees-51A degrees at the minimal half-width of the X-ray diffraction rocking curve (omega(theta)) similar to 24'. The observed bend of a cylindrical character in the structure of GaN/AlN/3C-SiC(001) is explained by the anisotropic deformation of semipolar GaN on silicon.
引用
收藏
页码：386 / 388
页数：3
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