Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode studied by in situ Electroluminescence Imaging

被引：9

作者：

Konishi, Kazuya ^{[1
]}

Yamamoto, Shigehisa ^{[1
]}

Nakata, Shuhei ^{[1
]}

Toyoda, Yoshihiko ^{[1
]}

Yamakawa, Satoshi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Himeji, Hyogo, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

SiC; Stacking Fault; Basal Plane Dislocation;

D O I：

10.4028/www.scientific.net/MSF.778-780.342

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We evaluate the velocity of stacking faults (SFs) expansion under various current and temperature levels on the pn diodes by in situ electroluminescence (EL) imaging. The driving force of the SFs expansion is analyzed on the basis of the experimental results. The velocity of the SFs expansion increases in proportion to the current density at the every junction temperature levels. The activation energy for the velocity of the SFs expansion is estimated under the each current density level.

引用

页码：342 / 345

页数：4

共 5 条

[1] Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy
Chung, Suk
Wheeler, Virginia
Myers-Ward, Rachael
Eddy, Charles R., Jr.
Gaskill, D. Kurt
Wu, Ping
Picard, Yoosuf N.
Skowronski, Marek
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)
[2] Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
Galeckas, A
Linnros, J
Pirouz, P
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (05) : 883 - 885
[3] Photoluminescence Study of Radiation-Enhanced Dislocation Glide in 4H-SiC
Hirano, Rii
Sato, Yuki
Tsuchida, Hideyuki
Tajima, Michio
Itoh, Kohei M.
Maeda, Koji
[J]. APPLIED PHYSICS EXPRESS, 2012, 5 (09)
[4] Stacking fault expansion from basal plane dislocations converted into threading edge dislocations in 4H-SiC epilayers under high current stress
Konishi, Kazuya
Yamamoto, Shigehisa
Nakata, Shuhei
Nakamura, Yu
Nakanishi, Yosuke
Tanaka, Takanori
Mitani, Yoichiro
Tomita, Nobuyuki
Toyoda, Yoshihiko
Yamakawa, Satoshi
[J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (01)
[5] Degradation of hexagonal silicon-carbide-based bipolar devices
Skowronski, M
Ha, S
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 99 (01)

← 1 →