Spin gap formation in SmB6

被引:15
作者
Glushkov, V. V.
Kuznetsov, A. V.
Churkin, O. A.
Demishev, S. V.
Paderno, Yu. B.
Shitsevalova, N. Yu.
Sluchanko, N. E.
机构
[1] Moscow Engn Phys Inst, Moscow 115409, Russia
[2] RAS, AM Prokhorov Gen Phys Inst, Moscow 119991, Russia
[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
[4] Ukrainian Acad Sci, Inst Problems Mat Sci, UA-252680 Kiev, Ukraine
基金
俄罗斯基础研究基金会;
关键词
intermediate valence; spin gap; many-body complexes;
D O I
10.1016/j.physb.2006.01.167
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The precise measurements of magnetic properties have been carried out on single crystals of SmB6 for temperatures down to 4.2 K. It is shown that the non-monotonic temperature dependence of magnetic susceptibility chi(T) of SmB6 at T > 50 K can be well approximated by an activation type contribution chi(a)(7)similar to 1/Texp(-E-a/k(B)T) with E-a/k(B)similar to 65K. This behaviour can be attributed to a spin gap formation with thermally induced magnetic moments characterized by the value of mu(eff)similar to 1.6 mu(B). A correlation between the "intra-gap contribution" Delta chi(T) = chi(T)-chi(a)(T) observed below 50 K and temperature-dependent excitations appearing in inelastic neutron and Raman scattering spectra of SmB6 at T < 70 K is discussed in terms of many-body complexes which are formed in the regime of fast charge fluctuations on Sm-sites. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:614 / 615
页数:2
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