Electron-related Raman scattering in dilute nitride GaAs/InxGa1-xNyAs1-y cylindrically shaped quantum dots

被引：3

作者：

Duque, C. M. ^{[1
]}

Morales, A. L. ^{[1
]}

Duque, C. A. ^{[1
]}

Mora-Ramos, M. E. ^{[2
]}

机构：

[1] Univ Antioquia UdeA, Inst Fis, Fac Ciencias Exactas & Nat, Grp Mat Condensada UdeA, Medellin, Colombia

[2] Univ Autonoma Estado Morelos, Ctr Invest Ciencias, Inst Ciencias Basicas & Aplicadas, Cuernavaca 62209, Morelos, Mexico

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2015年 / 87卷

关键词：

Dilute nitride; Quantum dots; Electron Raman scattering; NITROGEN;

D O I：

10.1016/j.spmi.2015.06.025

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The investigation of the intersubband electron Raman scattering differential cross-section in dilute nitride GaAs/InxGa1-xNyAs1-y cylindrical quantum dots is presented. The electron states are calculated with the inclusion of the effects of an externally applied static electric field. The secondary radiation differential cross section is reported as a function of the emitted photon energy for different values of the field and the vertical size of the quantum dot. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：83 / 88

页数：6

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