Single ion implantation for solid state quantum computer development

被引：6

作者：

Schenkel, T ^{[1
]}

Meijer, J ^{[1
]}

Persaud, A ^{[1
]}

McDonald, JW ^{[1
]}

Holder, JP ^{[1
]}

Schneider, DH ^{[1
]}

机构：

[1] EO Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

QUANTUM DOT DEVICES AND COMPUTING | 2002年 / 4656卷

关键词：

D O I：

10.1117/12.460808

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this article we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for P-31(q+) ions. When P-31(q+) ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

引用

页码：10 / 15

页数：6

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