Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS diode

被引：7
|
作者：
Huang, Runhua [1 ,2 ]
Chen, Gang
Bai, Song
Li, Rui [1 ]
Li, Yun [2 ]
Tao, Yonghong [1 ,2 ]
机构：
[1] Nanjing Elect Devices Inst, Nanjing, Jiangsu, Peoples R China
[2] Nanjing Elect Devices Inst Nanjing, Nanjing, Peoples R China
来源：
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷
关键词：
4H-SiC; JBS diodes; Edge termination; floating guard rings;
D O I：
10.4028/www.scientific.net/MSF.778-780.800
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 mu m with a doping of 9x10(14) cm(-3). The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4 V at J(F) = 80 A/cm(2)
引用
收藏
页码：800 / +
页数：2
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