Simulation, Fabrication and Characterization of 4500V 4H-SiC JBS diode

4H-SiC JBS diode with breakdown voltage higher than 4.5 kV, has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper we report the design, the fabrication, and the electrical characteristics of 4H-SiC JBS diode. Numerical simulations have been performed to select the doping level and thickness of the drift layer and the effectiveness of the edge termination technique. The epilayer properties of the N-type are 55 mu m with a doping of 9x10(14) cm(-3). The diodes were fabricated with a floating guard rings edge termination. The on-state voltage was 4 V at J(F) = 80 A/cm(2)