Effect of InGaAs as a Strain Reducing Layer on Molecular Beam Epitaxy grown InAs Quantum Dots

被引：0

作者：

Saha, Jhuma ^{[1
]}

Panda, Debiprasad ^{[2
]}

Das, Debabrata ^{[2
]}

Chakrabarti, Subhananda ^{[2
]}

机构：

[1] Indian Inst Technol, Ctr Res Nanotechnol & Sci, Bombay, Maharashtra, India

[2] Indian Inst Technol, Dept Elect Engn, Bombay, Maharashtra, India

来源：

2018 3RD INTERNATIONAL CONFERENCE ON MICROWAVE AND PHOTONICS (ICMAP) | 2018年

关键词：

Quantum Dot; strain; hydrostatic; photoluminescence;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Theoretical and experimental studies has been presented to understand the impact of InGaAs as a strain reducing layer (SRL) on InAs quantum dots. The ground state photoluminescence peak of InAs quantum dots with varying InGaAs capping layer thickness have been compared with the conventional GaAs capped one. The hydrostatic and biaxial strain distributions of all the samples have also been evaluated. To verify the accuracy of the theoretical work, the simulated data were validated with the experimental data with an average 2.5% error.

引用

页数：2

共 5 条

[1] A multicolor, broadband (5-20 μm), quaternary-capped InAs/GaAs quantum dot infrared photodetector [J].

Adhikary, Sourav ;

Aytac, Yigit ;

Meesala, Srujan ;

Wolde, Seyoum ;

Perera, A. G. Unil ;

Chakrabarti, Subhananda .

APPLIED PHYSICS LETTERS, 2012, 101 (26)

[2] Strain effects on the electronic structure of strongly coupled self-assembled InAs/GaAs quantum dots:: Tight-binding approach [J].

Jaskolski, W. ;

Zielinski, M. ;

Bryant, Garnett W. ;

Aizpurua, J. .

PHYSICAL REVIEW B, 2006, 74 (19)

[3] Quantum-dot infrared photodetectors: Status and outlook [J].

Martyniuk, P. ;

Rogalski, A. .

PROGRESS IN QUANTUM ELECTRONICS, 2008, 32 (3-4) :89-120

[4] Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dots [J].

Srujan, M. ;

Ghosh, K. ;

Sengupta, S. ;

Chakrabarti, S. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (12)

[5] Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs [J].

Suseendran, J. ;

Halder, N. ;

Chakrabarti, S. ;

Mishima, T. D. ;

Stanley, C. R. .

SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (06) :900-906

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