A Proposal for Wide-Bandgap Intermediate-Band Solar Cells Using Type-II InP/InGaP Quantum Dots

被引：0
|
作者：
Tayagaki, Takeshi [1 ]
Nagato, Yuki [1 ,2 ]
Okano, Yoshinobu [2 ]
Sugaya, Takeyoshi [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki, Japan
[2] Tokyo City Univ, Tokyo, Japan
来源：
2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We propose the use of type-II InP quantum dots (QDs) in wide-bandgap InGaP host for the wide-bandgap intermediate-band solar cells (IBSCs). We demonstrate that the type-II InP QDs in the InGaP host exhibits carrier lifetimes greater than 30 ns. In addition, we find that while the valence band offset for holes is negligible, a large confinement potential for electrons (i.e., similar to 0.35 eV) is formed in these type-II InP QDs. This indicates that type-II InP QDs can simultaneously suppress thermal carrier escape while enhancing the second optical excitation in the InGaP host, thus leading to a highly efficient IBSC.
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页码：160 / 162
页数：3
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