Improvement of uniformity in chemical vapor deposition of silicon carbide by using CFD

被引：10

作者：

Seo, Jin-Won ^{[1
]}

Kim, Jun-Woo ^{[1
]}

Choi, Kyoon ^{[1
]}

Lee, Jong-Heun ^{[2
]}

机构：

[1] Korea Inst Ceram Engn & Technol, Icheon Branch, Inchon 17303, South Korea

[2] Korea Univ, Dept Mat Sci & Engn, Seoul 02841, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2016年 / 68卷 / 01期

关键词：

Computational fluid dynamics (CFD); Chemical vapor deposition (CVD); Silicon carbide; Hard coating; GAS-PHASE; CH3SICL3-H-2; SIMULATION; SYSTEMS; CVD;

D O I：

10.3938/jkps.68.170

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The chemical vapor deposition (CVD) of silicon carbide (SiC) on carbon has been widely used as a general method to suppress dust generation on carbon surfaces. For a CH3SiCl3 (MTS) and hydrogen system, computational fluid dynamic simulations to predict the growth rate of the silicon carbide are performed. The results of the simulations are consistent with the experimental results where the deposition rate depends highly on the H/Si composition and the specimen's location. This simulation can provide guidance in optimizing the CVD process and improving the apparatus for CVD of SiC.

引用

页码：170 / 175

页数：6

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