Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms

被引:27
作者
Tao, Junguang [1 ]
Guan, Lixiu [2 ]
机构
[1] Hebei Univ Technol, Sch Mat Sci & Engn, Key Lab New Type Funct Mat Hebei Prov, Tianjin 300130, Peoples R China
[2] Hebei Univ Technol, Sch Sci, Tianjin 300401, Peoples R China
关键词
TOTAL-ENERGY CALCULATIONS; AB-INITIO; BAND-GAP; OXIDE; FILMS;
D O I
10.1038/srep44568
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Recently, SnO has attracted more and more attention, because it is a bipolar electronic material holding great potential in the design of p-n junction. In this paper, we examine the effect of extrinsic point defects on modifying the electronic and magnetic properties of SnO using density functionals theory (DFT). The surface adatoms considered are B, C, N, O and F with a [He] core electronic configuration. All adatoms are found energetically stable. B, C, N and F adatoms will modify the band gap and introduce band gap states. In addition, our calculations show that N, B and F can introduce stable local magnetic moment to the lattice. Our results, therefore, offer a possible route to tailor the electronic and magnetic properties of SnO by surface functionalization, which will be helpful to experimentalists in improving the performance of SnO-based electronic devices and opening new avenue for its spintronics applications.
引用
收藏
页数:7
相关论文
共 42 条
[1]  
Banhart F, 2011, ACS NANO, V5, P26, DOI [10.1021/nn102598m, 10.1016/B978-0-08-102053-1.00005-3]
[2]   IMPROVED TETRAHEDRON METHOD FOR BRILLOUIN-ZONE INTEGRATIONS [J].
BLOCHL, PE ;
JEPSEN, O ;
ANDERSEN, OK .
PHYSICAL REVIEW B, 1994, 49 (23) :16223-16233
[3]   Valley-selective circular dichroism of monolayer molybdenum disulphide [J].
Cao, Ting ;
Wang, Gang ;
Han, Wenpeng ;
Ye, Huiqi ;
Zhu, Chuanrui ;
Shi, Junren ;
Niu, Qian ;
Tan, Pingheng ;
Wang, Enge ;
Liu, Baoli ;
Feng, Ji .
NATURE COMMUNICATIONS, 2012, 3
[4]   Raman spectrum of graphene and graphene layers [J].
Ferrari, A. C. ;
Meyer, J. C. ;
Scardaci, V. ;
Casiraghi, C. ;
Lazzeri, M. ;
Mauri, F. ;
Piscanec, S. ;
Jiang, D. ;
Novoselov, K. S. ;
Roth, S. ;
Geim, A. K. .
PHYSICAL REVIEW LETTERS, 2006, 97 (18)
[5]   The rise of graphene [J].
Geim, A. K. ;
Novoselov, K. S. .
NATURE MATERIALS, 2007, 6 (03) :183-191
[6]   Phonon density of states of Sn in textured SnO under high pressure: Comparison of nuclear inelastic x-ray scattering spectra to a shell model [J].
Giefers, H. ;
Koval, S. ;
Wortmann, G. ;
Sturhahn, W. ;
Alp, E. E. ;
Hu, M. Y. .
PHYSICAL REVIEW B, 2006, 74 (09)
[7]   Ab initio study of native defects in SnO under strain [J].
Granato, D. B. ;
Albar, A. ;
Schwingenschloegl, U. .
EPL, 2014, 106 (01)
[8]   Enhancement of p-type mobility in tin monoxide by native defects [J].
Granato, D. B. ;
Caraveo-Frescas, J. A. ;
Alshareef, H. N. ;
Schwingenschloegl, U. .
APPLIED PHYSICS LETTERS, 2013, 102 (21)
[9]   Oxide bipolar electronics: materials, devices and circuits [J].
Grundmann, Marius ;
Klupfel, Fabian ;
Karsthof, Robert ;
Schlupp, Peter ;
Schein, Friedrich-Leonhard ;
Splith, Daniel ;
Yang, Chang ;
Bitter, Sofie ;
von Wenckstern, Holger .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (21)
[10]   Selective fabrication of n- and p-type SnO films without doping [J].
Hayashi, Hiroyuki ;
Katayama, Shota ;
Huang, Rong ;
Kurushima, Kosuke ;
Tanaka, Isao .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2015, 9 (03) :192-196