Tailoring the electronic and magnetic properties of monolayer SnO by B, C, N, O and F adatoms

被引:26
|
作者
Tao, Junguang [1 ]
Guan, Lixiu [2 ]
机构
[1] Hebei Univ Technol, Sch Mat Sci & Engn, Key Lab New Type Funct Mat Hebei Prov, Tianjin 300130, Peoples R China
[2] Hebei Univ Technol, Sch Sci, Tianjin 300401, Peoples R China
来源
SCIENTIFIC REPORTS | 2017年 / 7卷
关键词
TOTAL-ENERGY CALCULATIONS; AB-INITIO; BAND-GAP; OXIDE; FILMS;
D O I
10.1038/srep44568
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Recently, SnO has attracted more and more attention, because it is a bipolar electronic material holding great potential in the design of p-n junction. In this paper, we examine the effect of extrinsic point defects on modifying the electronic and magnetic properties of SnO using density functionals theory (DFT). The surface adatoms considered are B, C, N, O and F with a [He] core electronic configuration. All adatoms are found energetically stable. B, C, N and F adatoms will modify the band gap and introduce band gap states. In addition, our calculations show that N, B and F can introduce stable local magnetic moment to the lattice. Our results, therefore, offer a possible route to tailor the electronic and magnetic properties of SnO by surface functionalization, which will be helpful to experimentalists in improving the performance of SnO-based electronic devices and opening new avenue for its spintronics applications.
引用
收藏
页数:7
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