Effects of gamma irradiations on structural and electrical properties of indium oxide thin films prepared by thermal evaporation

被引:33
作者
Sudha, A. [1 ]
Maity, T. K. [1 ]
Sharma, S. L. [1 ]
机构
[1] Indian Inst Technol, Dept Phys, Kharagpur 721302, W Bengal, India
关键词
Thin films; Indium oxide; Gamma radiation; Electrical properties; Structure; OPTICAL-PROPERTIES; RADIATION;
D O I
10.1016/j.matlet.2015.11.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Effects of gamma irradiations on structural and electrical properties of the post-annealed indium oxide thin films of thickness 750 nm, prepared by thermal evaporation in vacuum, were studied. The thin films, exposed to various levels of the gamma radiation dose, were characterized by XRD, SEM and I-V measurements. Results show that the average grain size and the degree of crystallinity increase with the gamma radiation dose up to a certain dose and decrease thereafter. Results also show that the conductivity Increases with the gamma radiation dose up to the same value of the dose and decreases thereafter. The dislocation density, however, shows the opposite trend of the dose dependence. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:372 / 375
页数:4
相关论文
共 23 条
  • [1] Ali A. V. Muhammed, 2012, Journal of Applied Sciences, V12, P1718, DOI 10.3923/jas.2012.1718.1721
  • [2] Structural modifications in thin films caused by gamma radiation
    Arshak, K
    Korostynska, O
    Henry, J
    [J]. CROSS-DISCIPLINARY APPLIED RESEARCH IN MATERIALS SCIENCE AND TECHNOLOGY, 2005, 480 : 13 - 19
  • [3] Thin and thick films of metal oxides and metal phthalocyanines as gamma radiation dosimeters
    Arshak, K
    Arshak, A
    Zleetni, S
    Korostynska, O
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (05) : 2250 - 2255
  • [4] Arshak K., 2003, Sensor Review, V23, P48, DOI 10.1108/02602280310457965
  • [5] Radiation-induced changes in thin film structures
    Arshak, K
    Korostynska, O
    [J]. IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 2003, 150 (04): : 361 - 366
  • [6] Gamma radiation dosimetry using tellurium dioxide thin film structures
    Arshak, K
    Korostynska, O
    [J]. SENSORS, 2002, 2 (08): : 347 - 355
  • [7] Response of metal oxide thin film structures to radiation
    Arshak, Khalil
    Korostynska, Olga
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 133 (1-3): : 1 - 7
  • [8] Influence of γ radiation on thin Ta2O5-Si structures
    Atanassova, E
    Paskaleva, A
    Konakova, R
    Spassov, D
    Mitin, VF
    [J]. MICROELECTRONICS JOURNAL, 2001, 32 (07) : 553 - 562
  • [9] Light enhanced gas sensing properties of indium oxide and tin dioxide sensors
    Comini, E
    Cristalli, A
    Faglia, G
    Sberveglieri, G
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2000, 65 (1-3) : 260 - 263
  • [10] InOx semiconductor films deposited on glass substrates for transparent electronics
    de Carvalho, C. Nunes
    Lavareda, G.
    Amaral, A.
    Conde, O.
    Ramos, A. R.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (23-25) : 2315 - 2318