A Ka-Band Dual-Band Digitally Controlled Oscillator With-195.1-dBc/Hz FoMT Based on a Compact High-Q Dual-Path Phase-Switched Inductor

被引:37
作者
Baylon, Joe [1 ]
Agarwal, Pawan [2 ]
Renaud, Luke [1 ]
Ali, Sheikh Nijam [3 ]
Heo, Deukhyoun [1 ]
机构
[1] Washington State Univ, Dept Elect Engn & Comp Sci, Pullman, WA 99164 USA
[2] Maxlinear Inc, Carlsbad, CA 92008 USA
[3] Skyworks Solut Inc, San Jose, CA 01801 USA
基金
美国国家科学基金会;
关键词
Fractional tuning range (FTR); inductive frequency tuning; millimeter wave (mmWave); phase-switched inductor; voltage-controlled oscillator (VCO); WIDE-TUNING-RANGE; VCO; NOISE;
D O I
10.1109/TMTT.2019.2917671
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a compact, low-loss, dual-path phaseswitched inductor suitable for millimeter-wave (mmWave) transceiver subblocks is proposed. The signal path through the structure is determined by the relative polarity of two differential excitation signals applied to the four-port structure. Because inductance is varied by altering signal path through the inductor, signal-path MOSFET switches are avoided. The inductor, therefore, demonstrates high, mode-invariant quality factor, facilitating the design of high-performance dual-band mmWave transceiver subblocks. Based on the proposed inductor, a dualband Ka-band oscillator is designed in a 65-nm CMOS technology which covers two frequency bands from 14.8 to 18.7 GHz and from 20.8 to 26.6 GHz. The proposed inductor facilitates a widely tunable, dual-band frequency range while maintaining the state-of-the-art phase noise, power consumption, and figure of merit (FoM). The oscillator achieves measured fractional tuning ranges of 23.3% and 24.5% and phase noise of -115.1 dBc/Hz at 2-MHz offset while consuming only 4.8-mW dc power. A peak tuning-range FoM of -195.1 and -194.9 dBc/Hz is demonstrated across the low-and high-frequency bands.
引用
收藏
页码:2748 / 2758
页数:11
相关论文
共 40 条
[1]   Switched Substrate-Shield-Based Low-Loss CMOS Inductors for Wide Tuning Range VCOs [J].
Agarwal, Pawan ;
Sah, Suman Prasad ;
Molavi, Reza ;
Mirabbasi, Shahriar ;
Pande, Partha Pratim ;
Oh, Seung Eel ;
Kim, Jong-Hoon ;
Heo, Deukhyoun .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (08) :2964-2976
[2]   Series Resonator Mode Switching for Area-Efficient Octave Tuning-Range CMOS LC Oscillators [J].
Agrawal, Abhishek ;
Natarajan, Arun .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (05) :1569-1579
[3]   A 40% PAE Frequency-Reconfigurable CMOS Power Amplifier With Tunable Gate-Drain Neutralization for 28-GHz 5G Radios [J].
Ali, Sheikh Nijam ;
Agarwal, Pawan ;
Renaud, Luke ;
Molavi, Reza ;
Mirabbasi, Shahriar ;
Pande, Partha Pratim ;
Heo, Deukhyoun .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2018, 66 (05) :2231-2245
[4]  
Ali SN, 2018, ISSCC DIG TECH PAP I, P406, DOI 10.1109/ISSCC.2018.8310356
[5]  
Ali SN, 2017, IEEE MTT S INT MICR, P1173
[6]  
[Anonymous], ELECTROMAGNETISM
[7]   A 80GHz Voltage Controlled Oscillator Utilizing a Negative Varactor in 90nm CMOS Technology [J].
Chaivipas, Win ;
Okada, Kenichi ;
Matsuzawa, Akira .
2008 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, 2008, :133-136
[8]   Effect of device mismatch on the phase and amplitude accuracy in LC quadrature VCOs [J].
Chamas, IR ;
Raman, S .
2006 IEEE RADIO AND WIRELESS SYMPOSIUM, PROCEEDINGS, 2006, :439-442
[9]  
Chang HC, 1997, IEEE T MICROW THEORY, V45, P1232, DOI 10.1109/22.618412
[10]  
Chang HC, 1997, IEEE MTT-S, P1061, DOI 10.1109/MWSYM.1997.602984