Equivalent circuit for VO2 phase change material film in reconfigurable frequency selective surfaces

被引：16

作者：

Sanphuang, Varittha ^{[1
]}

Ghalichechian, Nima ^{[1
]}

Nahar, Niru K. ^{[1
]}

Volakis, John L. ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, ElectroSci Lab, Columbus, OH 43212 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 25期

关键词：

VANADIUM DIOXIDE; TRANSITION; ANTENNA;

D O I：

10.1063/1.4938468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We developed equivalent circuits of phase change materials based on vanadium dioxide (VO2) thin films. These circuits are used to model VO2 thin films for reconfigurable frequency selective surfaces (FSSs). This is important as it provides a way for designing complex structures. A reconfigurable FSS filter using VO2 ON/OFF switches is designed demonstrating -60 dB isolation between the states. This filter is used to provide the transmission and reflection responses of the FSS in the frequency range of 0.1-0.6 THz. The comparison between equivalent circuit and full-wave simulation shows excellent agreement. (C) 2015 AIP Publishing LLC.

引用

页数：5

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