Evaluation of hole mobility degradation by remote Coulomb scattering in Ge pMOSFETs

被引：3

作者：

Han, Kai ^{[1
]}

Wang, Xiaolei ^{[2
,3
]}

Xiang, Jinjuan ^{[2
,3
]}

Zhou, Lixing ^{[2
,3
]}

Zhang, Jiazhen ^{[4
]}

Wang, Yanrong ^{[5
]}

Ma, Xueli ^{[2
,3
]}

Yang, Hong ^{[2
,3
]}

Zhang, Jing ^{[5
]}

Zhao, Chao ^{[2
,3
]}

Ye, Tianchun ^{[2
,3
]}

Wang, Wenwu ^{[2
,3
]}

机构：

[1] Weifang Univ, Dept Phys & Elect Sci, Weifang 261061, Peoples R China

[2] Chinese Acad Sci, Key Lab Microelect Devices & Integrated Technol, Inst Microelect, Beijing 100029, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Tsinghua Univ, High Sch, Beijing 100084, Peoples R China

[5] North China Univ Technol, Microelect Dept, Beijing 100041, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2019年 / 34卷 / 07期

关键词：

germanium; MOSFET; mobility; Coulomb scattering; LIMITED MOBILITY; N-MOSFETS; MODEL;

D O I：

10.1088/1361-6641/ab2167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comprehensive, numerical simulation of the remote Coulomb scattering (RCS) in Ge pMOSFETs due to interfacial charges and dipole in the gate stack. Hole mobility is calculated using a relaxation time approximation that consistently accounts for intra and intersubband transitions and multisubband transport. Our results show that the RCS appreciably degrades the hole mobility at both low and high electric field region. Especially the remote dipole scattering plays a main role on the RCS. Moreover, we discuss the dependence of hole mobility on interlayer GeO2 thickness, and possible benefits in terms of the RCS limited mobility by using an interlayer with higher dielectric constant.

引用

页数：8

共 41 条

[1]

[Anonymous], 2016, J PHYS D APPL PHYS

[2] An Improved Surface Roughness Scattering Model for Bulk, Thin-Body, and Quantum-Well MOSFETs [J].

Badami, Oves ;

Caruso, Enrico ;

Lizzit, Daniel ;

Osgnach, Patrik ;

Esseni, David ;

Palestri, Pierpaolo ;

Selmi, Luca .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (06) :2306-2312

[3] The influence of Coulomb centers located in HfO2/SiO2 gate stacks on the effective electron mobility [J].

Barraud, Sylvain ;

Bonno, Olivier ;

Casse, Mikael .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (07)

[4] Evaluation of the Coulomb-limited mobility in high-κ dielectric metal oxide semiconductor field effect transistors [J].

Casterman, D. ;

De Souza, M. M. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (06)

[5] Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs [J].

Esseni, D ;

Abramo, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (07) :1665-1674

[6]

Esseni D., 2011, Nanoscale MOS Transistors: Semi-Classical Transport and Applications

[7] Low-Frequency Noise Characterization of GeOx Passivated Germanium MOSFETs [J].

Fang, Wen ;

Simoen, Eddy ;

Arimura, Hiroaki ;

Mitard, Jerome ;

Sioncke, Sonja ;

Mertens, Hans ;

Mocuta, Anda ;

Collaert, Nadine ;

Luo, Jun ;

Zhao, Chao ;

Thean, Aaron Voon-Yew ;

Claeys, Cor .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (07) :2078-2083

[8] Coulomb scattering model for ultrathin silicon-on-insulator inversion layers [J].

Gamiz, F ;

Jiménez-Molinos, F ;

Roldán, JB ;

Cartujo-Cassinello, P .

APPLIED PHYSICS LETTERS, 2002, 80 (20) :3835-3837

[9]

Hamaguchi C, 2010, BASIC SEMICONDUCTOR PHYSICS, SECOND EDITION, P1, DOI 10.1007/978-3-642-03303-2

[10] SIMULATION OF LINEAR AND NONLINEAR ELECTRON-TRANSPORT IN HOMOGENEOUS SILICON INVERSION-LAYERS [J].

JUNGEMANN, C ;

EMUNDS, A ;

ENGL, WL .

SOLID-STATE ELECTRONICS, 1993, 36 (11) :1529-1540

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