Metallic conductivity at low temperatures in poly(3,4-ethylenedioxythiophene) doped with PF6

被引:70
作者
Aleshin, A
Kiebooms, R
Menon, R
Wudl, F
Heeger, AJ
机构
[1] Institute for Polymers and Organic Solids, University of California at Santa Barbara, Santa Barbara
关键词
D O I
10.1103/PhysRevB.56.3659
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The temperature dependences of the conductivity and magnetoconductivity pf poly(3,4-ethylenedioxythiophene) doped with PF6 (room-temperature conductivity of 200-300 S/cm) have been studied; sigma(T) is weakly temperature dependent with the characteristic resistivity ratio rho(r)=rho(1.4 K)/rho(291 K) =1.5-2.8. The sign of the temperature coefficient of resistivity (TCR) changes below 10 K from negative to positive for metallic samples with rho(r)<2.1; the temperature of the resistivity maximum, T-m, decreases with increasing rho(r). High magnetic fields induce the transition from positive to negative TCR for all samples with rho(r)<2.1 and decrease the low-temperature conductivity (negative magnetoconductance) for samples with rho(r) > 2.1. The conductivity at low temperatures is well described by a T-1/2 dependence in both cases (negative and positive TCR) in a magnetic field and with the magnetic field equal to zero. The magnetoconductance is negative, isotropic, and exhibits an H-2 dependence at low magnetic fields and an H-1/2 dependence at high magnetic fields. These results are successfully explained as resulting from the influence of electron-electron interactions on the low-temperature conductivity.
引用
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页码:3659 / 3663
页数:5
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共 22 条
  • [1] Electronic transport in the metallic state of oriented poly(p-phenylenevinylene)
    Ahlskog, M
    Reghu, M
    Heeger, AJ
    Noguchi, T
    Ohnishi, T
    [J]. PHYSICAL REVIEW B, 1996, 53 (23): : 15529 - 15537
  • [2] ALESHIN A, IN PRESS SYNTH MET
  • [3] Transport properties of ion-implanted and chemically doped polyaniline films
    Aleshin, AN
    Mironkov, NB
    Suvorov, AV
    Conklin, JA
    Su, TM
    Kaner, RB
    [J]. PHYSICAL REVIEW B, 1996, 54 (16) : 11638 - 11643
  • [4] UNIVERSAL SCALING OF THE MAGNETOCONDUCTANCE OF METALLIC SI-B
    BOGDANOVICH, S
    DAI, PH
    SARACHIK, MP
    DOBROSAVLJEVIC, V
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (13) : 2543 - 2546
  • [5] HIGH-RESOLUTION STUDY OF CONDUCTIVITY AND CELL POTENTIAL VERSUS DOPING CONCENTRATION IN POTASSIUM-DOPED POLYACETYLENE - CORRELATION WITH STRUCTURAL TRANSITIONS
    COUSTEL, N
    BERNIER, P
    FISCHER, JE
    [J]. PHYSICAL REVIEW B, 1991, 43 (04): : 3147 - 3153
  • [6] MAGNETOCONDUCTANCE OF METALLIC SI-B NEAR THE METAL-INSULATOR-TRANSITION
    DAI, P
    ZHANG, YZ
    SARACHIK, MP
    [J]. PHYSICAL REVIEW B, 1992, 46 (11): : 6724 - 6731
  • [7] ELECTRICAL-CONDUCTIVITY OF METALLIC SI-B NEAR THE METAL-INSULATOR-TRANSITION
    DAI, PH
    ZHANG, YZ
    SARACHIK, MP
    [J]. PHYSICAL REVIEW B, 1992, 45 (08): : 3984 - 3994
  • [8] ELECTROCHEMICAL AND SPECTROSCOPIC CHARACTERIZATION OF POLYALKYLENEDIOXYTHIOPHENES
    DIETRICH, M
    HEINZE, J
    HEYWANG, G
    JONAS, F
    [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1994, 369 (1-2): : 87 - 92
  • [9] POLY(ALKYLENEDIOXYTHIOPHENE)S - NEW, VERY STABLE CONDUCTING POLYMERS
    HEYWANG, G
    JONAS, F
    [J]. ADVANCED MATERIALS, 1992, 4 (02) : 116 - 118
  • [10] KOHLMAN RS, 1996, PHYSICAL PROPERTIES