Linear- and Geiger-Mode Characteristics of Al0.8Ga0.2As Avalanche Photodiodes

被引：3
作者：
Ren, Min [1 ]
Chen, Yaojia [1 ]
Sun, Wenlu [1 ]
Chen, Xiao Jie [2 ]
Johnson, Erik B. [2 ]
Christian, James F. [2 ]
Campbell, Joe C. [1 ]
机构：
[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA
[2] Radiat Monitoring Devices Inc, Watertown, MA 02472 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2014年 / 26卷 / 24期
基金：
美国国家航空航天局;
关键词：
Avalanche photodiodes; photodetectors; SINGLE-PHOTON DETECTION; MULTIPLICATION NOISE; OHMIC CONTACTS; GAIN; PASSIVATION; GAAS;
D O I：
10.1109/LPT.2014.2359177
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report Al0.8Ga0.2As avalanche photodiodes with low dark current and low excess noise. In linear mode when biased to a photocurrent gain of 200, a 150-mu m diameter device exhibits dark current of 32 pA (180 nA/cm(2)). The external quantum efficiency is 31% at 490 nm and the excess noise factor corresponds to k similar to 0.15. In Geiger mode operation, low dark count probability of 10(-5) at room temperature is reported.
引用
收藏
页码：2480 / 2483
页数：4
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